Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic

Surface Chemical Treatment for the Cleaning of AlN and GaN Surfaces

“…3 In particular, the incorporation of contaminants or an increase in surface roughness during processing prior to deposition of the gate oxide in metal-oxide-semiconductor-field-effect transistors (MOSFETs) has been shown to degrade device properties such as threshold voltage, breakdown voltage, and peak mobility. [4][5][6] Usually the semiconductor surface is cleaned by using conventional organic solvents (acetone and methanol) followed by removal of the surface oxide using acids (HF or HCl). However, a clean surface cannot be obtained with these wet chemical treatments alone due to possible contamination from the atmosphere and from chemical residuals.…”

Digital Etching of InP by Intermittent Injection of Trisdimethylaminophosphorus in Ultrahigh Vacuum

“…Recently, the combination of the growth and in situ etching in identical equipment has been emerging as a very promising technique 4 for surface cleaning 5 and fabrication of nanoscale structures, such as quantum dots. 6,7 As is well known, the presence of interface states at an etched/regrown interface or an epi layer substrate interface is harmful for device performance. Multiple process of ex situ etching and passivation of semiconductor heterostructures are commonly used before regrowth to decrease the interface state density.…”