Improving<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:msub><mml:mrow><mml:mi>I</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">ON</mml:mi></mml:mrow></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>I</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">OFF</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects

Nazari, Atefeh; Faez, Rahim; Shamloo, Hassan

doi:10.1016/j.spmi.2015.08.018

Cited by 31 publications

(3 citation statements)

References 25 publications

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“…Single vacancy defects in graphene have grown much attention. [47][48][49][50][51][52][53][54][55] Moreover, ring defects and vacancy complexes are also of interest. [56][57][58][59][60][61][62][63][64][65][66] One-dimensional (1D) arrays of topological ring defects have been explored theoretically, 67,68 and ring defect arrays have been imaged experimentally.…”

Section: Introductionmentioning

confidence: 99%

Various defects in graphene: a review

2022

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Section: Introductionmentioning

confidence: 99%

Various defects in graphene: a review

2022

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“…Increasing the width of graphene nanoribbons used in field-effect transistors results in an increment in the leakage current and subthreshold swing and decrease in their I ON /I OFF ratio [44]. It is possible to increase the I ON /I OFF ratio and subthreshold swing in graphene nanoribbon field-effect transistors using single-vacancy defects [46]. These defects increase the band gap of the graphene, as is demonstrated by theoretical studies using computer simulation.…”

Section: Electrical Properties Of the Graphene And Basic Devicesmentioning

confidence: 94%

State-of-the-Art Electronic Devices Based on Graphene

Vargas-Bernal¹

2016

Nanoelectronics and Materials Development

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Graphene can be considered as the material used for electronic devices of this century, due to its excellent physical and chemical properties, which have been studied and implemented from a theoretical basis and have allowed the development of unique and innovative applications. The need for an ongoing study of the state-of-the-art electronic devices is ultimately useful for the progress achieved so far and future project applications. To date, graphene has been used individually in composite, hybrid materials or functional materials. In this chapter, an overview of their applications in nanoelectronics, particularly with an emphasis directed to flexible electronics, is presented. The description of the advantages and properties of graphene at a level of materials science and engineering is presented, in order to spread its enormous potential. In addition, the future prospects of these applications arising from the developments made currently in the laboratory phase are examined.

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“…point defects are the most possible defects because of their low formation energies [1,2]. Stone-Wales defect, vacancies, and adatoms are some of the conspicuous point defects commonly observed in monolayer and bilayer graphene [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor

Owlia¹,

Keshavarzi²,

Nasrollahnejad³

2017

J. Nano- Electron. Phys.

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In this paper, the current-voltage characteristics of a double-gated monolayer armchair graphene nanoribbon field-effect transistor (DG-AGNRFET) is investigated by introducing a Stone-Wales (SW) defect. After changing positions of the defect in width and length of the channel, it is found that the SW defect decreases off current and leads to the further reduction of the off current as the defect moves to the edge. However, this defect has not shown a notable impact on the on current. The results have confirmed the possibility of controlling the electron transport of the DG-AGNRFET by defect engineering can be useful to extend the applications of graphene nanoribbon-based devices. The device has been simulated based on the self-consistent solution of a 3D Poisson-Schrödinger equation using non-equilibrium Green's function (NEGF) formalism.

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ImprovingION/IOFFand sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects

Cited by 31 publications

References 25 publications

Various defects in graphene: a review

Various defects in graphene: a review

State-of-the-Art Electronic Devices Based on Graphene

Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor

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