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In this paper, the current-voltage characteristics of a double-gated monolayer armchair graphene nanoribbon field-effect transistor (DG-AGNRFET) is investigated by introducing a Stone-Wales (SW) defect. After changing positions of the defect in width and length of the channel, it is found that the SW defect decreases off current and leads to the further reduction of the off current as the defect moves to the edge. However, this defect has not shown a notable impact on the on current. The results have confirmed the possibility of controlling the electron transport of the DG-AGNRFET by defect engineering can be useful to extend the applications of graphene nanoribbon-based devices. The device has been simulated based on the self-consistent solution of a 3D Poisson-Schrödinger equation using non-equilibrium Green's function (NEGF) formalism.

Bilayer graphene (BLG) is a well-known allotrope of carbon atoms and nominated to be used as an appropriate transistor channel. In spite of advances for preparing defect-free and crystalline BLGs, unwanted defects are emerged during immature fabrication process. This paper investigates I–V curves of bilayer graphene nanoribbon FET (BLGNRFET) in the presence of one of the most possible defect called Stone-Wales (SW) defect. These defects are located at three positions along and across the channel. Simulation approach is performed by fully quantum-mechanical numerical calculations using Non-Equilibrium Green’s Function (NEGF) formalism. The role of the defect position is studied for both OFF and ON states. Furthermore, the effect of the defect position is included on several digital and analog metrics such as delay, power delay product and cut-off frequency.

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