Improving Drain-Induced Barrier Lowering Effect and Hot Carrier Reliability With Terminal via Structure on Half-Corbino Organic Thin-Film Transistors

Hung, Yang‐Hao; Chang, Ting‐Chang; Tu, Yu‐Fa; Lu, I-Nien; Zheng, Yu‐Zhe; Chiang, Cheng-Ling; Chen, Jianjie; Kuo, Chang-Hung; Sun, Li‐Min; Zhou, Kuan‐Ju

doi:10.1109/led.2022.3149898

Cited by 3 publications

(3 citation statements)

References 26 publications

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“…It has to be noted that, to quantify the RDF effect, 3-D Monte-Carlo atomistic TCAD tools based on the finiteelement method are necessary to achieve sufficient accuracy. For example, the need of atomistic simulations in the accurate prediction of MOSFET variations with RDF, LER, and WFV has been demonstrated [4,6]. However, the atomistic simulations are too computationally expensive and time-consuming in device-and circuit-level statistical modeling such as the optimization of SRAM cells [15].…”

Section: Device Simulation and Modeling Methodologymentioning

confidence: 99%

“…More short channel effects (SCEs), especially drain-induced barrier lowering (DIBL), will severely affect device channel barriers and cause transistor performance degeneration, unreliability, and loss of integrated circuit (IC) yield. DIBL referred originally to a reduction of threshold-voltage (V T ) at a higher drain bias voltage (V d ) [2][3][4]. As an important figure-of-merit (FOM) for ultra-short metal-oxidesemiconductor-field-effect-transistors (MOSFETs), DIBL has attracted great attention in recent years because it drastically influences device drive current as well as gate-tochannel controllability [4].…”

Section: Introductionmentioning

confidence: 99%

“…DIBL referred originally to a reduction of threshold-voltage (V T ) at a higher drain bias voltage (V d ) [2][3][4]. As an important figure-of-merit (FOM) for ultra-short metal-oxidesemiconductor-field-effect-transistors (MOSFETs), DIBL has attracted great attention in recent years because it drastically influences device drive current as well as gate-tochannel controllability [4]. On the other hand, suppressing DIBL is nearly the most effective way to improve intrinsic gain and output characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Estimation of Drain-Induced Barrier Lowering Variation Due to Random Dopant Fluctuation Effect in Nanometer MOSFETs by Gamma Distribution

Lyu,

Han,

Zhang

et al. 2024

Frontiers in Artificial Intelligence and Applications

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Drain-induced barrier lowering (DIBL) and its variations are regarded as significant challenges in nanometer semiconductor device and circuit analysis, design as well as fabrication. This paper investigates the statistical characteristic of DIBL due to random dopant fluctuation (RDF) effect in MOSFETs. The results exhibit that the DIBL variation is more suitably described by a gamma distribution than a Gaussian distribution, based on validation by Monte Carlo simulations. The average error and mean square error of a gamma approximation are –0.14987 and 0.42591, respectively, for the probability density function, and 0.13523 and 0.50584, respectively, for the cumulative density function, which are much smaller than the equivalent measures of a Gaussian approximation. Our study also reveals that DIBL dispersion due to RDF effect in nanometer MOSFET channels is asymmetric with a long tail, which should be described with higher moments such as skewness and kurtosis.

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Section: Device Simulation and Modeling Methodologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Estimation of Drain-Induced Barrier Lowering Variation Due to Random Dopant Fluctuation Effect in Nanometer MOSFETs by Gamma Distribution

Lyu,

Han,

Zhang

et al. 2024

Frontiers in Artificial Intelligence and Applications

View full text Add to dashboard Cite

show abstract

Boosting the photosensitivity of organic phototransistors with photomultiplication via Corbino configurations

Choi,

Park,

Moon

et al. 2024

Applied Physics Letters

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An organic phototransistor (OPT) with a photomultiplication mechanism is studied, where a bulk-heterojunction of C70 and 1,1-bis-(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane is used as a channel and a light-absorbing layer with an Al Schottky contact as source/drain electrodes. The light absorption in the source-side region is found to dominate the photomultiplication effect. In addition, the source electrode area that is up to 100 μm away from the channel is identified as the most effective region in the OPTs with contact-limited operation used in this study. Therefore, to maximize the light-sensing performance of the contact-limited OPTs, we propose Corbino source/drain geometries that have a larger source electrode area than that of the drain electrode. The Corbino-type OPTs show improved photo-response properties proportional to the relative increment of the source-side area, reaching 1.7-fold higher performance in terms of photosensitivity compared to the conventional lateral-type OPTs.

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Asymmetric Electrode Structure Induces Dual-Channel Phenomenon Under Hot-Carrier Stress in Organic Thin-Film Transistors

Huang

Chang

et al. 2023

IEEE Electron Device Lett.

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Improving Drain-Induced Barrier Lowering Effect and Hot Carrier Reliability With Terminal via Structure on Half-Corbino Organic Thin-Film Transistors

Cited by 3 publications

References 26 publications

Estimation of Drain-Induced Barrier Lowering Variation Due to Random Dopant Fluctuation Effect in Nanometer MOSFETs by Gamma Distribution

Estimation of Drain-Induced Barrier Lowering Variation Due to Random Dopant Fluctuation Effect in Nanometer MOSFETs by Gamma Distribution

Boosting the photosensitivity of organic phototransistors with photomultiplication via Corbino configurations

Asymmetric Electrode Structure Induces Dual-Channel Phenomenon Under Hot-Carrier Stress in Organic Thin-Film Transistors

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