Estimation of Drain-Induced Barrier Lowering Variation Due to Random Dopant Fluctuation Effect in Nanometer MOSFETs by Gamma Distribution
Weifeng Lyu,
Ying Han,
Caiyun Zhang
et al.
Abstract:Drain-induced barrier lowering (DIBL) and its variations are regarded as significant challenges in nanometer semiconductor device and circuit analysis, design as well as fabrication. This paper investigates the statistical characteristic of DIBL due to random dopant fluctuation (RDF) effect in MOSFETs. The results exhibit that the DIBL variation is more suitably described by a gamma distribution than a Gaussian distribution, based on validation by Monte Carlo simulations. The average error and mean square erro… Show more
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