Improving and Characterizing (Cd,Zn)Te Crystals for Detecting Gamma-Ray Radiation

Давыдов, Л. Н.; Fochuk, P.; Zakharchenko, A.A.; Kutny, V.; Rybka, A.; Kovalenko, Nazar O.; Sulima, S. V.; Terzin, Igor S.; Gerasimenko, A. S.; Kosmyna, M. B.; Sklyarchuk, V.; Kopach, O.; Panchuk, O.; Pudov, A.O.; Bolotnikov, A. E.; James, R. B.

doi:10.1109/tns.2015.2448939

Cited by 13 publications

(4 citation statements)

References 24 publications

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“…For advanced experiments at modern and next-generation synchrotrons and XFELs, these detectors need to be suitable for high radiation energy and extreme photon flux [1,2]. For quite some years, high-quality radiation grade CdZnxTe(1−x) (0 x 0.1) has been the choice of ≤ ≤ material [1,3,4,5] for those sensors due to its electrical and radiation absorption properties. For desirable high spatial resolution, small pixels on a 55µm pitch are required.…”

Section: Introductionmentioning

confidence: 99%

Deposition of Fine-Pitch Indium Bumps on Single Die

Schneider,

Ghorbanian,

Burt

et al. 2024

IMAPSource Proceedings

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Photolithographic lift-off at wafer level is a wellestablished method for depositing indium bumps onto pixels of electronic components such as sensors and application-specific integrated circuits (ASIC). These indium bumps form interconnects between pixels of the components during flip-chip bonding to make devices such as radiation detectors. Such components are not always available on wafer-scale, and single dies need to be processed in small-scale production, R&D, or for Cd(Zn)Te detector material. Photolithography on single dies is ineffective due to the edge-bead of photoresist that compromises perfect indium deposition onto pixels near the periphery of the die. To utilize the maximum surface area of a die, a rigid mask with apertures (shadow mask) is an adequate substitute for the photoresist. Different mask designs and production techniques for fine-pitch indium bump arrays are investigated by testing electroformed stencils or micromachined silicon (Si) membranes as shadow masks. For the indium deposition, the sensor and ASIC dies are clamped into custom-made jigs that include shadow masks. Alternatively, dies can be adhered to shadow masks with soluble adhesive. The apertures of a mask are aligned to the pixel array of the detector component. Bump arrays with 250μm- and 100μm-pitch were demonstrated with electroformed stencils. For smaller pitch (55μm) and bump diameter of ~20μm, specialized masks from Si membranes are tested. Components with successfully deposited indium bump arrays were subsequently flip-chip bonded at room temperature without reflowing the indium. A bond yield of at least 99.9% pixels for such flip-chip bonded radiation detector was shown using the read-out signal from exposure with a flat field X-ray radiation of an Am-241 sealed source.

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Section: Introductionmentioning

confidence: 99%

Deposition of Fine-Pitch Indium Bumps on Single Die

Schneider,

Ghorbanian,

Burt

et al. 2024

IMAPSource Proceedings

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“…Semiconductors CdTe, ZnTe and solid solutions based on them (Cd1 -xZnxTe) are of great interest from a technological point of view due to their use in optoelectronics. These materials are suitable for photorefraction, electro-optical modulators fabrication, -ray and X-ray detectors and elements for optical recording media on n-p-i-m nanostructures [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Influence of the Degree of Atomic Hydrogen Passivation of Electrically Active Centers in Cd1 – xZnxTe on the Resolution of Optical Recording of Images with n-p-i-m Nanostructures

Brytan¹,

Peleshchak²,

Uhrun³

et al. 2021

J. Nano- Electron. Phys.

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An electrostatic-deformation model of atomic hydrogen passivation of electrically active centers of the type of compression defects in Cd1 -xZnxTe semiconductors is proposed. It is found that the effect of increasing passivation of electrically active centers in Cd1 -xZnxTe occurs when the concentration of atomic hydrogen NH does not exceed the concentration of acceptors NA (NH  NA), and weakening of the passivation effect is observed when the concentration of atomic hydrogen NH is much higher than the concentration of acceptors NA (NH  NA). The expression for the resolution Ri of optical-registering metal-dielectricsemiconductor nanostructures Cd1 -xZnxTe (0  x  1) is obtained and the resolution value for nonpassivated as well as for passivated in the hydrogen atmosphere semiconductor material Cd0.8Zn0.2Te is calculated, which is R1  6682 and R2  17423, respectively. A method for expanding the spectral range of optical information recording based on n-p-i-m nanostructures by changing the composition (0  x  1) of the solid solution Cd1 -xZnxTe is proposed.

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“…To produce these devices, high resistivity rates are required, which are observed in CZT:In crystals [3]. In spite of the great attention given by researchers to the technology and physical properties of CZT solid solution [4][5][6][7][8], the technological problems together with some physical limitations, hold back the wide introduction of such detectors. Hence -the low yield of suitable products, and hence the high cost of appliances.…”

Section: Introductionmentioning

confidence: 99%

Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals

Sklyarchuk

Zakharuk

Kolisnyk

et al. 2019

PCSS

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The electrical characteristics of In-doped Cd0.9Zn0.1Te (CZT:In) crystals with concentration of Со = 3,5×1017 cm-3, which are used in X- and gamma-radiation detectors, were investigated. CZT:In crystals possess a weakly pronounced n-type conductivity and had a resistivity of (1 ¸ 2)*109 Ohm´cm at 293 K. In/CZT:In/In structures with ohmic contacts and Cr/CZT:In/In structures with Schottky barriers were created on their base. The temperature dependences of the resistivity in investigated material were analyzed and explained. The energy position of the deep level responsible for the material’ dark conductivity was found. Due to the study of the temperature dependencies of currents limited by space-charge and of currents of the ohmic section of the volt-ampere characteristics (I-VC), the compensation degree of CZT:In crystals is determined. It was found that Cr/CZT:In/In structures with a Schottky diode, fabricated on crystals with a lower compensation degree, possessed the best detection properties than similar structures fabricated on crystals with a greater compensation degree.

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Improving and Characterizing (Cd,Zn)Te Crystals for Detecting Gamma-Ray Radiation

Cited by 13 publications

References 24 publications

Deposition of Fine-Pitch Indium Bumps on Single Die

Deposition of Fine-Pitch Indium Bumps on Single Die

Influence of the Degree of Atomic Hydrogen Passivation of Electrically Active Centers in Cd1 – xZnxTe on the Resolution of Optical Recording of Images with n-p-i-m Nanostructures

Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals

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