Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

We report on the determination of band offsets in rf-sputtered Aluminum Zinc Oxide (AZO)/single crystal β-Ga 2 O 3 (AZO/Ga 2 O 3) heterostructures using X-Ray Photoelectron Spectroscopy. The bandgaps of the materials were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga 2 O 3 and 3.2eV for AZO. The valence band offset was determined to be-0.61eV ± 0.23eV, while the conduction band offset was determined to be-0.79 ± 0.34 eV. The AZO/Ga 2 O 3 system has a nested, or straddling, gap (type I) alignment and provides a convenient method for reducing contact resistance on Ga 2 O 3-based device structures.

show abstract

Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping

Yao

Liu

et al. 2017

J. Mater. Chem. C

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

Cited by 8 publications

References 22 publications

Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions

Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions

Valence and conduction band offsets in AZO/Ga2O3 heterostructures

Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping

Contact Info

Product

Resources

About