Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices

Anderson, Travis J.; Greenlee, Jordan D.; Feigelson, Boris N.; Hite, Jennifer K.; Hobart, Karl D.; Kub, Francis J.

doi:10.1109/tsm.2016.2600371

Cited by 34 publications

(42 citation statements)

References 20 publications

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“…Owing to an activation energy as high as 160 meV, the activation ratio decreases with the increasing doping density of acceptors. Using symmetric multicycle rapid thermal annealing (SMRTA) in nitrogen overpressure, an activation ratio as high as 10% has been achieved, which agrees with the theoretical limit. However, the highest activation ratio of 2.3% achieved by conventional RTA is lower than the theoretical limit.…”

Section: Introductionsupporting

confidence: 74%

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Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

Akazawa

Kamoshida

Murai

et al. 2019

Physica Status Solidi (b)

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The effect of increasing the dosage on the electrical properties of Mg‐ion‐implanted GaN before activation annealing is investigated to obtain knowledge on the defect levels generated by ion implantation. To probe the near‐surface region, GaN metal‐oxide‐semiconductor (MOS) structures with Al2O3 are used. Two kinds of MOS diodes with Mg‐ion dosages of 1.5 × 1011 and 1.5 × 1012 cm−2 implanted at 50 keV are prepared. Although anomalous capacitance–voltage (C–V) characteristics are observed for the low‐dosage sample, they are improved by annealing at 600 °C for 3 h. However, for the high‐dosage sample, more severe and persistent frequency dispersion is observed in the C–V characteristics, which is not improved by the same annealing. On the basis of the detailed analysis of capacitance–frequency (C–f) characteristics, it is concluded that the discrete interface trap at 0.2–0.3 eV below the conduction band is responsible for the frequency dispersion observed for the high‐dosage sample. Combined with the results of deep‐level transient spectroscopy, it is highly likely that the bulk deep levels affect the C–V and C–f characteristics. The possibility that the dominant deep levels are changed by the increase in Mg‐ion dosage is discussed.

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Section: Introductionsupporting

confidence: 74%

“…Recently, attempts have been made to achieve the sufficient activation of implanted Mg acceptors . Commonly, activation is achieved by thermal annealing at a temperature higher than 1200 °C or, more specifically, 1230 °C .…”

Section: Introductionmentioning

confidence: 99%

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

Akazawa

Kamoshida

Murai

et al. 2019

Physica Status Solidi (b)

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“…The high defect density in GaN grown on a sapphire substrate might have been a reason for the unsuccessful formation of a p-type region. Very recently, the successful formation of p-type regions on GaN epitaxial layers on free-standing GaN substrates by Mg ion implantation has been confirmed by observing the rectifying characteristics of p-n junctions formed by applying multicycle rapid thermal annealing, 5,6 standard high-temperature annealing, 7,8 and coimplantation of the N-face of GaN with Mg and H ions. 9 However, it has been reported that defects remain in the Mg-implanted GaN layer even after high-temperature annealing on the basis of positron annihilation spectroscopy (PAS) and photoluminescence (PL) studies.…”

mentioning

confidence: 95%

Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing

2018

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“…4, the migration energies are thus estimated between 2.0 eV and 1.3 eV, respectively. Theoretical predictions for E M [39][40] [45][46], once suitable annealing procedures were established to overcome the negative effects of implantation damage. In contrast, the fact that the Ga vacancy creation process is absent when GaN is doped with Mg during epitaxial growth, suggests that in this case the excess Mg will rather enter the layer interstitially.…”

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confidence: 99%

Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations

et al. 2017

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Radioactive27 Mg (t 1/2 =9.5 min) was implanted into GaN of different doping types at CERN's ISOLDE facility and its lattice site determined via β − emission channeling. Following implantations between room temperature and 800°C, the majority of 27 Mg occupies the substitutional Ga sites, however, below 350°C significant fractions were also found on interstitial positions ~0.6 Å from ideal octahedral sites. The interstitial fraction of Mg was correlated with the GaN doping character, being highest (up to 31%) in samples doped p-type with 2×1019 cm −3 stable Mg during epilayer growth, and lowest in Si-doped n-GaN, thus giving direct evidence for the amphoteric character of Mg. Implanting above 350°C converts interstitial 27 Mg to substitutional Ga sites, which allows estimating the activation energy for migration of interstitial Mg as between 1.3 and 2.0 eV.

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Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices

Cited by 34 publications

References 20 publications

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing

Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations

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