Abstract:The flexibility in design of the potential well in PWB diodes has shown promising prospects for zero-bias operation capability and improvements in the overall performance of the diode. We consider the right intrinsic region whilst regrading further the GaAs well. The performance of the diodes was measured and compared in terms of the turn-on voltage and curvature coefficient. We found that the turn on voltage of the diodes improves significantly with increases in the graded regions. At a current density of . ×… Show more
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