Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

Evaluation of optimal chlorine doping concentration in zinc oxide on glass for application as new transparent conductive oxide

“…Doped ZnO with low resistivity and high transmittance in the visible region is much cheaper than ITO, more stable, and its reserves are abundant in nature. ZnO doped with various impurities such as aluminum (Al) [6], gallium (Ga) [7], boron (B) [8], indium (In) [9], fluorine (F) [10], and chlorine [11][12][13] with resistivities of the order of 10 À4 and 10 À3 V cm is studied extensively for its use as TCO.…”

The Influence of Oxygen Pressure on ZnO:Al Thin Films Properties Grown by Layer by Layer Growth Method at Magnetron Sputtering

“…Однак низька розповсюдженість в природі індію є суттєвою перепоною для подальшого використання ППП на основі ІТО [5,6]. Альтернативою до використання останнього є застосування ППП оксиду цинку, легованих домішками Al, Ga, In, B, Si, Ge, Ti, Zr, Hf, Ag та F [7].…”

Electrical and Optical Properties of ZnO Irradiated with Hydrogen Plasma

“…Because of its outstanding properties and many types of distinctive nanostructures, ZnO is considered as a promising material for various applications including light emitting diodes, ultraviolet photodetectors, transparent conductive layers, and gas sensors [1][2][3][4]. A wide range of techniques such as hydrothermal method, chemical vapor deposition (CVD), reactive plasma deposition (RPD), and aqueous solution based methods are used to synthesize ZnO [5][6][7][8][9]. For example, large ZnO single crystals are grown by hydrothermal method.…”

“…For example, large ZnO single crystals are grown by hydrothermal method. Group III elements (B, Al, and Ga) are commonly used as shallow donors to form highly conductive ZnO films [3,7]. So far, Al-and Ga-doped ZnO films with a resistivity as low as 10 −4 Ωcm have been reported [10,11].…”