Evaluation of optimal chlorine doping concentration in zinc oxide on glass for application as new transparent conductive oxide

Abstract

ZnO:Cl thin films grown on glass substrates at 200 8C by the pulsed laser deposition (PLD) technique using ZnO:Cl targets show preferential c-axis (0002) orientation having hexagonal wurtzite structure without secondary phases. The chlorine concentration in the ZnO:Cl thin films is varied from 1.04 to 7.28 at%. X-ray photoelectron spectroscopy (XPS) studies indicate existence of Zn-O and Zn-Cl bonding. Hall effect measurements and UV-Visible absorption spectra show lowest resistivity of 6.12 Â 10 À4 V cm and average transmittance of 92% in the visible range for the 4.16 at% chlorine-doped ZnO thin film. Possible application of the material as a new transparent conductive zinc oxide is very much imminent in optoelectronic devices.

Development of Inverted Organic Photovoltaics with Anion doped ZnO as an Electron Transporting Layer

“…On the other hand, the Hall mobility is dramatically decreased for the sample with over than 0.5wt% doping concentration. Highly doped chlorine causes the lattice distortion of ZnO and results in the interruption of carrier mobility [34]. The trend of Hall mobility of doped ZnO ETL is similar to the change of PCE, Jsc, and FF of I-OPV cells.…”

“…For improving the conductivity and mobility of ZnO thin film, n-type doping process with group III metallic cation elements such as Al [15,17,20,24], Ga [16,20], and In [17,20] is widely used and that substitute the zinc atoms in ZnO lattice [20,24]. Furthermore, it is also well known that group VII non-metallic anion elements doping such as F [18,29], Cl [19][20][21][22][23][24][25][26][27][28][29], Br [29], and I [29] can also improve the conductivity and mobility. These anion elements can substitute the oxygen atoms in ZnO lattice [20,24,28].…”

“…Generally, the oxygen atoms as vacancies can act as an electron-hole recombination sites in I-OPVs [10,30,31], and results in decrease the performance of I-OPV. Among the various methods to reducing the recombination sites of ZnO ETL, anion doping can be one of the ideal concepts, because the atonic radius of group VII anion is almost similar to the oxygen atom as well as their excess electrons can help to achieving the high mobility [23,26] and conductivity [21,24,26] while maintaining high optical transparency [20,21,23,27], compared to group III cation metallic elements. Above all, anion element doping into ZnO ETL has been conducted by various deposition techniques such as electrochemical deposition [19,21,22,24,25], atomic layer deposition [26], radio frequencymagnetron sputtering [29], metalorganic chemical vapor deposition (MOCVD) [20,28], and pulsed laser deposition [23,27].…”

Photocatalytic and electrically conductive transparent Cl-doped ZnO thin films via aerosol-assisted chemical vapour deposition

“…However, there have been some reports on the electrical, optical and photoelectrochemical properties of Cl-doped ZnO, which show the potential of Cl doping. [30][31][32][33][34][35] Therefore, we were interested in exploring further the novel properties of ZnO:Cl, in particular the lm deposition method which has been shown to play a key role in modifying the lm properties. Aerosol-assisted chemical vapour deposition (AACVD) is an effective technique to control the morphology and simultaneously the properties of the deposited lms.…”

The Properties of Atomic Layer Deposited Al-Doped ZnO Films Using H₂O and O₃ As Oxidants

“…순수한 ZnO는 투명 전도성 산화물로 쓰기에 비 교적 낮은 전기 전도도를 갖기 때문에 ZnO에 전자공 여체(electron donor) 역할을 하는 Ⅲ족 원소 Al, Ga, In과 Ti 등의 원소를 첨가하는 연구가 진행되고 있다 [4][5][6][7][8][9]. Al-doped ZnO (AZO)는 도핑된 Al …”