Improvement of sputtered Galfenol thin films for sensor applications

Adolphi, B.; McCord, Jeffrey; Bertram, M.; Oertel, C.‐G.; Merkel, U.; Marschner, Uwe; Schäfer, R.; Wenzel, Christian; Fischer, Wolf‐Joachim

doi:10.1088/0964-1726/19/5/055013

Cited by 22 publications

(11 citation statements)

References 16 publications

(28 reference statements)

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“…1 we compare the XRD patterns of layers deposited with the same growth power in the ballistic and in the diffusive flow. In both cases, the main diffraction peak is related to the (110) reflection of the α-Fe structure as generally observed in Fe-Ga thin films [11,15]. The two samples also show a rather small diffraction peak corresponding to Fe(211).…”

Section: Resultssupporting

confidence: 59%

“…Thus, the features of this sample can be a combination of the existence of both a more prominent presence of a disordered A2 phase with respect to the ordered D0 3 /B2 phases and of orthorhombic Ga clusters. A number of papers studied Fe-Ga thin films [6,[11][12][13][14][15][16][17][32][33][34] and, more specifically, deposition by sputtering [11][12][13][14][15][16][17], although few papers explore thin films with the composition range studied in this paper [6,11,35]. The paper by Dunlap et al [11], in which they studied sputtered Fe-Ga alloys with a (110) texture, is the most similar to the current case.…”

Section: Resultsmentioning

confidence: 97%

“…Although several papers deal with the growth of Fe-Ga thin films by sputtering [11][12][13][14][15][16][17], the impact of different phenomena occurring during sputtering deposition has not been completely clarified or quantified. For example, neutrals (atoms ejected from the target upon the impact of energetic particles) suffer collisions during their movement from target to substrate [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Influence of the sputtering flow regime on the structural properties and magnetic behavior of Fe-Ga thin films (Ga ∼ 30 at.%)

2016

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In this paper we analyze the structure of Fe-Ga layers with a Ga content of ∼30 at.% deposited by the sputtering technique under two different regimes. We also studied the correlation between the structure and magnetic behavior of the samples. Keeping the Ar pressure fixed, we modified the flow regime from ballistic to diffusive by increasing the distance between the target and the substrate. X-ray diffraction measurements have shown a lower structural quality when growing in the diffusive flow. We investigated the impact of the growth regime by means of x-ray absorption fine structure (XAFS) measurements and obtained signs of its influence on the local atomic order. Full multiple scattering and finite difference calculations based on XAFS measurements point to a more relevant presence of a disordered A2 phase and of orthorhombic Ga clusters on the Fe-Ga alloy deposited under a diffusive regime; however, in the ballistic sample, a higher presence of D0 3 /B2 phases is evidenced. Structural characteristics, from local to long range, seem to determine the magnetic behavior of the layers. Whereas a clear in-plane magnetic anisotropy is observed in the film deposited under ballistic flow, the diffusive sample is magnetically isotropic. Therefore, our experimental results provide evidence of a correlation between flow regime and structural properties and its impact on the magnetic behavior of a rather unexplored compositional region of Fe-Ga compounds.

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Section: Resultssupporting

confidence: 59%

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Influence of the sputtering flow regime on the structural properties and magnetic behavior of Fe-Ga thin films (Ga ∼ 30 at.%)

2016

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“…There are various reports of FeGa films deposited onto metallic underlayers 9,[12][13][14] and substrates other than Si and glass. After optimisation, a set of films were deposited on MgO and Quartz substrates along with Si, at P Sp 140W, 300 °C substrate temperature for 180 min to see how substrate affects the films.…”

Section: Resultsmentioning

confidence: 99%

Growth and Magnetic Properties of RF Sputtered Fe-Ga Thin Films

2015

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We report the growth and characterization of Fe-Ga thin films. These films were RF sputtered onto Si, MgO and quartz substrates by controlling the parameters such as the deposition time, power and substrate temperature. The deposited films were characterized using X-Ray Diffraction, Atomic Force Microscopy and Vibration Sample Magnetometry measurements. The effect of substrates on the structure and magnetic properties were studied. XRD pattern of the deposited films showed the formation of DO 3 phase with L1 2 ordered structure at higher sputtering power. The room temperature deposited films demonstrated higher magnetization (0.08 emu/g) as compared to higher substrate temperature (300 o C) deposited films. The M r /M s ratio was found to be 0.037 for films deposited at room temperature and 0.009 for the substrate temperature 300 o C. L1 2 order was observed in films deposited on MgO and Quartz substrates. Magnetization was also found to be high (M s out of plane = 518 emu/cm 3 , M s in plane = 707 emu/cm 3 ) for films deposited on MgO substrate.

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“…The reasons are two fold: [1] the equation, k s ¼ (2/5)k 100 þ (3/ 5)k 111 , used to calculate k s in Ref. 14, is based on an isotropic assumption, which is not true in the film case [e.g., x-ray feature (ii)]; [2] our Co substitution range is wider, i.e., up to 23 atom % Co, than that shown in Ref. 14.…”

Section: Resultsmentioning

confidence: 99%

Magnetic properties of Fe62Co19Ga19 films deposited on Si(100) substrates

Jen

Tsai

et al. 2011

Journal of Applied Physics

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Fe81–XCoXGa19 films, with x = 0−23 atom % Co, were deposited on Si(100) substrates, respectively, by the dc magnetron sputtering method. Film thickness (tf) ranged from 30 to 400 nm. We have done the following experiments on those films: saturation magnetostriction (λS), high-temperature magnetic hysteresis, x-ray diffraction (XRD), atomic force microscopy, Auger-depth profile analysis, and plane-view and/or cross-section transmission electron microscopy. Our main finding is that if x increases from 0 to 19 atom % Co, λS increases from 56 to 152 ppm, and if x continues to increase from 19 to 23 atom % Co, λS decreases. These results indicate that the addition of Co in the Fe81Ga19 alloy is advantageous in enhancing λS, if x is the correct value. From XRD, the Fe62Co19Ga19/Si(100) film comprises the A2 and B2 phases. The mechanism for large enhancement of λS in Fe62Co19Ga19/Si(100) is related to an intrinsic origin. The tf dependence of λS for the Fe62Co19Ga19 films is that: [1] in the range of 110 ≤ tf ≤ 400 nm, λS increases as tf decreases; [2] in the range of 30 ≤ tf ≤ 110 nm, λS decreases as tf continues to decrease. The λS behavior in the regions [1] and [2] is explained based on the modified Neel model. Other physical properties of the Fe62Co19Ga19 films include the following: saturation magnetization 4πMS = 1.8 – 2.0 T, coercivity HC = 35 – 64 Oe, Curie temperature TC = 597 °C, planar (mean) grain size DP = 29.6 nm, and columnar grain size DL ≈ tf.

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Improvement of sputtered Galfenol thin films for sensor applications

Cited by 22 publications

References 16 publications

Influence of the sputtering flow regime on the structural properties and magnetic behavior of Fe-Ga thin films (Ga ∼ 30 at.%)

Influence of the sputtering flow regime on the structural properties and magnetic behavior of Fe-Ga thin films (Ga ∼ 30 at.%)

Growth and Magnetic Properties of RF Sputtered Fe-Ga Thin Films

Magnetic properties of Fe62Co19Ga19 films deposited on Si(100) substrates

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