2006
DOI: 10.1007/bf03218724
|View full text |Cite
|
Sign up to set email alerts
|

Improvement of spatial resolution in nano-stereolithography using radical quencher

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

1
28
0

Year Published

2009
2009
2023
2023

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 62 publications
(29 citation statements)
references
References 13 publications
1
28
0
Order By: Relevance
“…From the very beginning [2], DLW has been used to produce sub-wavelength feature sizes. During the last decade, the impact of several experimental parameters has been examined in order to increase the photoresists' resolution [5,6,7,8,9]. While improved feature sizes have been demonstrated using a photoresist with higher sensitivity [6] other results have indicated that completely unsensitized photoresists offer the smallest features [8].…”
Section: Introductionmentioning
confidence: 99%
“…From the very beginning [2], DLW has been used to produce sub-wavelength feature sizes. During the last decade, the impact of several experimental parameters has been examined in order to increase the photoresists' resolution [5,6,7,8,9]. While improved feature sizes have been demonstrated using a photoresist with higher sensitivity [6] other results have indicated that completely unsensitized photoresists offer the smallest features [8].…”
Section: Introductionmentioning
confidence: 99%
“…Due to quadratic dependence on light intensity, polymerization reaction is induced in tiny focused volume of monomer that allows formation of microstructures in 3D space [12]. It has been already recognized as an effective method for fabricating 3D optoelectronic devices, photonic crystals, micromechanical components, etc.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, various research studies have reported the reduction of the lateral feature size, reaching less than 100 nm, by intentionally introducing radical quenchers into photocurable resins. Takada et al [44] reduced the feature size down to about 65 nm, and Park et al [45] revealed line patterns that are around 95 nm wide. They demonstrated the tendency of voxel-size reduction by increasing the amount of radical quenchers in a resin.…”
Section: What Is the End Of The Smallest Feature Size In Tps?mentioning
confidence: 99%
“…Therefore, by adding a radical quencher, the voxel-size reduction causes the low mechanical strength of a polymerized structure due to its low molecular weight. As such, a microstructure with a low mechanical strength is easily distorted by the surface tension of a rinsing material in a developing process [45].…”
Section: What Is the End Of The Smallest Feature Size In Tps?mentioning
confidence: 99%
See 1 more Smart Citation