Improvement of Sidewall Roughness of Submicron SOI Waveguides by Hydrogen Plasma and Annealing

Bellegarde, Cyril; Pargon, E.; Sciancalepore, Corrado; Petit-Etienne, C.; Hugues, Vincent; Robin-Brosse, Daniel; Hartmann, Jean‐Michel; Lyan, Philippe

doi:10.1109/lpt.2018.2791631

Cited by 34 publications

(17 citation statements)

References 18 publications

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“…Recent studies have shown the pure hydrogen streams capability to smoothen out the sidewall roughness of single-mode silicon waveguides for TE-operation to record-low values, when operating such H 2 annealing at particular pressure, temperature, and time exposure conditions [30].…”

Section: Multistep Chemical-physical Annealing Of Si 3 N 4 Waveguidesmentioning

confidence: 99%

Ultralow-loss tightly confining Si₃N₄ waveguides and high-Q microresonators

Dirani¹,

Youssef²,

Petit-Etienne³

et al. 2019

Opt. Express

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110

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Efficient nonlinear phenomena in integrated waveguides imply the realization in a nonlinear material of tightly confining waveguides sustaining guided modes with a small effective area with ultra-low propagation losses as well as high-power damage thresholds. However, when the waveguide cross-sectional dimensions keep shrinking, propagation losses and the probability of failure events tend to increase dramatically. In this work, we report both the fabrication and testing of high-confinement, ultralow-loss silicon nitride waveguides and resonators showing average attenuation coefficients as low as ∼3 dB/m across the S-, C-, and L bands for 1.6-µm-width × 800-nm-height dimensions, with intrinsic quality factors approaching ∼10 7 in the C band. The present technology results in very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds. In particular, we developed here an optimized fully subtractive process introducing a novel chemical-physical multistep annealing and encapsulation fabrication method, resulting in high quality Si 3 N 4-based photonic integrated circuits for energy-efficient nonlinear photonics and quantum optics.

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Section: Multistep Chemical-physical Annealing Of Si 3 N 4 Waveguidesmentioning

confidence: 99%

Ultralow-loss tightly confining Si₃N₄ waveguides and high-Q microresonators

Dirani¹,

Youssef²,

Petit-Etienne³

et al. 2019

Opt. Express

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110

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“…Another route is to smooth out the sidewalls using H2 thermal annealing. Previous studies have shown a strong reduction of Si waveguide roughness, down to sub-nanometer values [19]- [21]. Such a method showed a significant propagation loss improvement for standalone waveguides.…”

Section: Introductionmentioning

confidence: 89%

“…This reduces the edge roughness down to sub-nanometer values with no volume change. We used a post-etching H2 annealing process at 850°C [19]. Waveguide cross-sections with and without smoothing are shown in Fig.…”

Section: Silicon Waveguide Smoothing Processmentioning

confidence: 99%

A Complete Si Photonics Platform Embedding Ultra-Low Loss Waveguides for O- and C-Band

Wilmart

Brision

Hartmann

et al. 2021

J. Lightwave Technol.

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We report ultra-low propagation losses in silicon submicrometric waveguides on a 200 mm CMOS compatible photonics platform. We show losses in C-band (O-band) as low as 0.1 dB/cm and 0.7dB/cm (0.14dB/cm and 1.1dB/cm) in monomode rib and strip waveguide geometries, respectively, thanks to a H2 smoothing annealing. In addition to optical losses down to unprecedented levels in silicon waveguides, we show that the performance characteristics of the main passive and active building blocks of the photonics platform are preserved or even improved by the smoothing process.

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“…In electronic circuits such as the wiring in silicon ICs, as the wiring width decreases, the transmission loss increases owing to the increase in electric resistance and stray capacitance. In silicon waveguides using propagating light waves in the 1310 and 1550 nm bands, the losses primarily induced by light scattering via side-wall roughness in the waveguide were a few tens of decibels per centimeter or less in the waveguides with sub-wavelength widths [23], [34]- [38]. In addition, the losses were over two orders of magnitude smaller than those of plasmonic waveguides in a similar sub-wavelength range.…”

Section: B Transmission Lossmentioning

confidence: 95%

Feasibility of Plasmonic Circuits in Nanophotonics

et al. 2020

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The configuration of plasmonic circuits comprising SiO2-load waveguides and their characteristics within the nanophotonic range are presented and compared with electronic and lightwave circuits in 1300 and 1550 nm wavelength bands. In the nanophotonic range of less than 1 m, plasmonic signals propagate in narrow waveguides with cross-sections less than a few hundred square nanometers, while lightwaves exhibit only slight propagation in high-refractive-index (i.e., Si) waveguides owing to the transmission loss increase via the cut-off wavelength of the waveguide. Additionally, the plasmonic signal transmission loss is lower than that of electric signals for transmission lengths less than a few hundred micrometers. During signal transmission, a narrow spectral width of the plasmonic signals is needed to suppress any signal shape deformation induced by the frequency dependence of the collective oscillation of electrons in plasmonic signals. In the nanophotonic range, the degree of integration for plasmonic circuits is not governed by the transmission loss but by the leak distance of the plasmonic signal optical field from the side-walls of the waveguides and components. Employing a metal/insulator/metal structure in plasmonic circuits is a valid way to heighten the integration density, and its effectiveness is numerically and experimentally confirmed in a plasmonic multiplexer less than 1 m in length. On the basis of these results, the feasibility of plasmonic circuits is discussed and it can be said that plasmonic circuits including waveguides and components are promising photonic techniques for signal transmission in the nanophotonic range.INDEX TERMS Integrated circuit, Integrated optics, Integrated optoelectronics, Nanophotonics, Optical interconnection, Plasmonics, Surface plasmon polariton, Wavelength division multiplexing. I. INTRODUCTIONPhotonics has historically been used to support daily life of our society, and the techniques in the field are indispensable for constructing and maintaining societal infrastructure. These techniques require key photonic components whose scale and power consumption requirements are being reduced as technology advances. Recently, optical interconnects have begun to be used in silicon integrated circuits (ICs) to enhance the information processing speed and catch up with the explosive increase in information demand. The lightwave circuits of interconnects typically comprise silicon waveguides that possess a relatively high refractive index. In the range of less than sub-wavelength optics, however, photonic crystals and high-refractive-index waveguides using lightwaves as signals are physically difficult to apply to circuits [1].At such small scales, surface plasmon polariton (SPP) waveguides are effective for constructing nanophotonic circuits. Various kinds of plasmonic waveguides have been developed and reported, such as index waveguides [2]-[5], grooved waveguides [6], [7], hybrid waveguides [8]-[10], and metal/insulator/metal (MIM) structured waveguides [11]-[16]. These v...

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Improvement of Sidewall Roughness of Submicron SOI Waveguides by Hydrogen Plasma and Annealing

Cited by 34 publications

References 18 publications

Ultralow-loss tightly confining Si₃N₄ waveguides and high-Q microresonators

Ultralow-loss tightly confining Si₃N₄ waveguides and high-Q microresonators

A Complete Si Photonics Platform Embedding Ultra-Low Loss Waveguides for O- and C-Band

Feasibility of Plasmonic Circuits in Nanophotonics

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Improvement of Sidewall Roughness of Submicron SOI Waveguides by Hydrogen Plasma and Annealing

Cited by 34 publications

References 18 publications

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

A Complete Si Photonics Platform Embedding Ultra-Low Loss Waveguides for O- and C-Band

Feasibility of Plasmonic Circuits in Nanophotonics

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Product

Resources

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Ultralow-loss tightly confining Si₃N₄ waveguides and high-Q microresonators

Ultralow-loss tightly confining Si₃N₄ waveguides and high-Q microresonators