Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

Peng, Ching-Shiang; Chang, Wen-Yuan; Lee, Yi‐Hsuan; Lin, Ming‐Han; Chen, Frederick; Tsai, Ming-Jinn

doi:10.1149/2.011204esl

Cited by 53 publications

(47 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…resistance window compared to the undoped devices as a result of an evident decrease of the resistance in the HRS, according to some literature data. [22,23] On the contrary, it has been reported that much higher doping concentrations (18-45%) than the present one increase the HRS resistance. [18] The RESET transitions, as reported in figure 1b, are qualitatively different in the two device typologies.…”

Section: Modelling Formulationcontrasting

confidence: 52%

“…Some works in the literature demonstrate that Al doping improves uniformity of both LRS and HRS, though the doping level is not specified or different from the one employed in the present work. [16,23,24,35] clearly identifying a correlation with the involved materials. [23,36,37] In a previous publication, the same authors already described the gradual resistance lowering as a thermally activated process for undoped and intermediately doped 4% Al:HfO2 devices.…”

Section: Resistance Switching Featuresmentioning

confidence: 86%

“…[13,21,22] For instance, Al doping in HfO2 has been demonstrated, also by the same authors, to reduce variability and influence the memory retention. [19,[23][24][25] In the present work, Al doping in HfO2-based RRAMs is investigated to get an insight on the filamentary switching mechanism of the devices. It is demonstrated that, while the filament formation process (SET process) is almost unaffected by the Al doping, the filament dissolution process (RESET process) and the defectivity of the resulting restored oxide are largely influenced by the presence of Al atoms.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Role of Al doping in the filament disruption in HfO₂resistance switches

Brivio¹,

Frascaroli²,

Spiga³

2017

Nanotechnology

View full text Add to dashboard Cite

Resistance switching devices, whose operation is driven by formation (SET) and dissolution (RESET) of conductive paths shorting and disconnecting the two metal electrodes, have recently received great attention and a deep general comprehension of their operation has been achieved. However, the link between switching characteristics and material properties is still quite weak. In particular, doping of the switching oxide layer has often been investigated only for looking at performance upgrade and rarely for a meticulous investigation of the switching mechanism. In this paper, the impact of Al doping of HfO devices on their switching operations, retention loss mechanisms and random telegraph noise traces is investigated. In addition, phenomenological modeling of the switching operation is performed for device employing both undoped and doped HfO. We demonstrate that Al doping influences the filament disruption process during the RESET operation and, in particular, it contributes in preventing an efficient restoration of the oxide with respect to undoped devices.

show abstract

Section: Modelling Formulationcontrasting

confidence: 52%

Section: Resistance Switching Featuresmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Role of Al doping in the filament disruption in HfO₂resistance switches

Brivio¹,

Frascaroli²,

Spiga³

2017

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…A large effort of experimental works is directed to finding ways of confining the conductive filament in the host oxide insulator, in order to improve the uniformity of resistive switching characteristics. It was found that, aside from embedding nanocrystals and multilayer structures, doping with foreign elements is an easy and effective way to improve resistive switching properties [60][61][62]. Therefore, in order to better understand the ionic conduction properties of the predicted I bam-Hf 2 O 3 phase, we calculated migration barriers for the most important elements, typically used for doping HfO 2 and as electrodes (see Table III).…”

Section: B Functionality With Respect To Forming and Switchingmentioning

confidence: 99%

Routes for increasing endurance and retention in HfO2 -based resistive switching memories

Rushchanskii

Blügel

2018

Phys. Rev. Materials

View full text Add to dashboard Cite

We investigate metastable and thermodynamically stable phases that can be expected to occur in electroformed filaments in resistively switching hafnia, and discuss their relevance for the switching process. To this end, we conduct a study, based on density functional theory combined with an evolutionary algorithm determining the composition-dependent (meta)stable phases in HfO x , focusing on the region 0 < x < 2. We find that oxygen vacancies in hafnia tend to form regular patterns, which leads to periodic metastable structures featuring onedimensional open channels, thus favoring ionic conductivity in the host material, i.e., oxygen migration. The band gap of such structures is systematically lowered with increasing oxygen deficiency, resulting in metallic behavior when oxygen migrates out of the channels. Moreover, we find that the solubility of oxygen in metallic Hf is very high, up to one oxygen per six metallic atoms, the concentration corresponding to a thermodynamically stable and ordered metallic compound, Hf 6 O. Therefore, thick enough metallic capping of Hf could play the role of an active electrode for hosting oxygen which migrates out of HfO 2. In combination with reversible oxygen migration in predicted suboxide phases, this should lead to robust resistive memory cells with high endurance and long retention.

show abstract

“…Several research groups have studied the effect of doping on resistive switching properties of HfO X fabricated through vacuum-based processes. [19][20][21] According to the theoretical calculations, V O formation energy decreases close to the dopant site. The magnitude of reduction in formation energy depends upon the valence electron number.…”

Section: Introductionmentioning

confidence: 94%

Control of resistive switching behaviors of solution-processed HfO_X-based resistive switching memory devices by n-type doping

Akbari

Lee

2016

RSC Adv.

View full text Add to dashboard Cite

show abstract

Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

Cited by 53 publications

References 18 publications

Role of Al doping in the filament disruption in HfO₂resistance switches

Role of Al doping in the filament disruption in HfO₂resistance switches

Routes for increasing endurance and retention in HfO2 -based resistive switching memories

Control of resistive switching behaviors of solution-processed HfO_X-based resistive switching memory devices by n-type doping

Contact Info

Product

Resources

About

Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

Cited by 53 publications

References 18 publications

Role of Al doping in the filament disruption in HfO2resistance switches

Role of Al doping in the filament disruption in HfO2resistance switches

Routes for increasing endurance and retention in HfO2 -based resistive switching memories

Control of resistive switching behaviors of solution-processed HfOX-based resistive switching memory devices by n-type doping

Contact Info

Product

Resources

About

Role of Al doping in the filament disruption in HfO₂resistance switches

Role of Al doping in the filament disruption in HfO₂resistance switches

Control of resistive switching behaviors of solution-processed HfO_X-based resistive switching memory devices by n-type doping