Improvement of resistive switching characteristics in ZrO₂film by embedding a thin TiO_xlayer

Abstract

The stabilization of the resistive switching characteristics is important to resistive random access memory (RRAM) device development. In this paper, an alternative approach for improving resistive switching characteristics in ZrO(2)-based resistive memory devices has been investigated. Compared with the Cu/ZrO(2)/Pt structure device, by embedding a thin TiO(x) layer between the ZrO(2) and the Cu top electrode, the Cu/TiO(x)-ZrO(2)/Pt structure device exhibits much better resistive switching characteristics. The improvement of the resistive switching characteristics in the Cu/TiO(x)-ZrO(2)/Pt structure device might be attributed to the modulation of the barrier height at the electrode/oxide interfaces.

Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications

“…6(a)), show that in OFF-state, conduction mechanism responsible for charge transport in the low voltage region is Ohmic (n ¼ 1.1) but is different in the medium and high voltage regions. IeV behavior in the medium voltage region indicates that the injected carrier density is greater than the free carrier density, which is a typical trap modified space charge limited current (SCLC) conduction mechanism in an insulator with shallow traps [18,19]. The traps might be rare earth oxide impurities which give rise to exponential distribution of localized states in the forbidden gap [20].…”

Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film

“…Good data retention with high resistance ratios of 10 Resistive switching random access memory devices have shown promise for developing low power nanoscale nonvolatile memory technology in the future. [1][2][3][4][5] Many previous studies of this topic have reported solid electrolyte-based resistive switching memory devices that use different materials, such as GeSe x , [6][7][8] CuTe/Al 2 O 3 , 13 and GeSe x /TaO x. 14 Resistive switching occurs because of the formation/dissolution of the silver (Ag) or Cu metallic filament under external bias.…”

Influence of oxygen vacancies on the EPIR effect in Nd0.7Sr0.3MnO3 ceramics

“…I-V and M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT 13 EPIR results indicate that the oxygen content has a strong influence on the electrical transport properties for NSMO ceramics. For the oxygen-enriched samples, the I-V characteristic is linear and the EPIR effect is not detectable.…”

“…In order to understand the essence of EPIR, a large variety of EPIR-materials were investigated, including binary oxides NiO [9][10][11] , ZrO 2 [12][13] and HfO 2 [14][15][16] as well as complex oxides such as Pr 1 -x Ca x MnO 3 [17][18] , BiFeO 3 [19][20][21] , and SrTiO 3 [22][23][24] . In terms of description we can roughly categorize them into two groups of redox and defects.…”