Improvement of Property of Pb(Zr_xTi_1-x)O₃ Thin Film Prepared by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition

Abstract

Pb(Zr, Ti)O3 (PZT) thin films with Zr/(Zr+Ti) of 0.42 were prepared on (111)Pt/Ti/SiO2/Si substrates at 620°C by metalorganic chemical vapor deposition (MOCVD). We attempted the pulse introduction of a mixture of source gases into the reaction chamber and succeeded in simultaneous improvements of the crystallinity, surface roughness and electrical properties of the PZT film by this preparation method. The (111)-orientation increased and the surface roughness decreased. Moreover, the leakage decreased and well-saturated symmetrical polarization-electric field (P-E) hysteresis loop were obtained. Remanent polarization (P r) and the coercive field (E c) values of this pulse-MOCVD film were 44 µC/cm2 and 85 kV/cm, respectively.

Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1∕3Nb2∕3)O3–PbTiO3 films grown on (100)cSrRuO3‖(100)SrTiO3 substrates by metal-organic chemical vapor deposition

“…13 Conductive epitaxial SrRuO 3 films were used as the bottom electrode and were epitaxially grown on ͑100͒SrTiO 3 substrates at 750°C by MOCVD were used as Pb, Ti, Mg, and Nb source materials, respectively. Oxygen was used as the oxidant gas and nitrogen as the carrier gas.…”

Experimental evidence of strain relaxed domain structure in (100)/(001)-oriented epitaxial lead titanate thick films grown by metal organic chemical vapor deposition

“…Details of the film preparation are described elsewhere. 12,13 Using a calibrated x-ray fluorescence spectrometer ͑PANalytical PW-2404͒, the Pb/Ti ratio of the films used in the present study was determined to be almost 1.0. Crystal structure of the films was characterized by high-resolution XRD ͑PANalytical X'Pert MRD͒.…”

Gas‐Pulsed CVD for Film Growth in the CuNiN System

“…The perovskite structure was fabricated by a sequential supply of Pb for the A-sites and of Zn and Nb for the B-sites. The interruption between the precursor pulses was 5 s. [6][7][8] This work employs, for the first time, purging with reactive gases between the CVD pulses and demonstrates the effect of the gas pulsing on the deposition process. For a demonstration of the design concept with a host material and the introduction of another component into the crystal structure, Cu 3 N was chosen as host and Ni was chosen as the other component.…”