Improvement of physical properties of IGZO thin films prepared by excimer laser annealing of sol–gel derived precursor films

Tsay, Chien‐Yie; Huang, Tzu-Teng

doi:10.1016/j.matchemphys.2013.03.051

Cited by 33 publications

(6 citation statements)

References 43 publications

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“…Eventually, with the 500 nm thick IGZO, the C G value at the upper fringe became less than 1/10 that of the bottom LMP value, implying that most UV lights were absorbed in the bottom part of the IGZO layer. The absorption coefficient of IGZO under UV light illumination is well known in a range of 10 5 (cm –1 ), representing the optical penetration depth of about 100 nm. − Therefore, the number of UV photons reaching the upper region of the IGZO (i.e., bottom region of the IGZO in the schematic; Figure a) decreases dramatically when the film thickness is thicker than 100 nm. The strong UV absorptivity of the IGZO layer affects the C G distribution of the Si layer, and it is proved from Figure f that the UV absorption in the Si region decreases as the IGZO layer thickness increases.…”

Section: Resultsmentioning

confidence: 99%

Bias-Switchable Photodetector from Broad-Band to UV-Selective Detection Mode Leveraging Nanolayered Dual-Schottky Junction

Kim

Rothschild

Lee

et al. 2022

ACS Appl. Nano Mater.

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The limitless potential of ultraviolet (UV) information is fueling the development of photodetecting technology beyond color image acquisitions such as air pollution monitoring, oil spill detection, and missile tracking systems. Ideal detectors for such applications need to separately perceive UV and visible lights to maximize their functional versatility. However, traditional device structures (e.g., photodiodes and photoconductors) inevitably require expensive filters or supplementary devices to discriminate the light sources. This study aims to develop photodetectors that provide dual functionalities in a single-unit device without any filters. To this end, we propose a device configuration based on two Schottky diodes stacked antiparallel. The dual-Schottky junctions (DSJs) uniquely arrange the band structure within the device to selectively create photocurrent from the targeted wavelengths (UV/visible) of light and block the rest (visible/UV) by adjusting the bias polarity. In addition, we further demonstrate dual-spectral detection in real time by mapping UV and broad-band (UV + visible) light images in a single frame without the aid of supplementary filters or equipment. The filter-free system, capable of UV/visible discrimination, would pave the way for developing a universal and multimodal next-generation photodetector with enhanced detection rates.

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Section: Resultsmentioning

confidence: 99%

Bias-Switchable Photodetector from Broad-Band to UV-Selective Detection Mode Leveraging Nanolayered Dual-Schottky Junction

Kim

Rothschild

Lee

et al. 2022

ACS Appl. Nano Mater.

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“…Laser treatment can effectively remove the impurities in the precursor film and promote the formation of lattice network [29,54,55,[61][62][63][64][65]. There are usually three mechanisms for the interaction between laser and precursor film: (1) thermal effect of laser; (2) photochemical cleavage of metastable bonds; and (3) photochemical effect.…”

Section: Active Layer Thin Films Prepared By Sol-gel Methodsmentioning

confidence: 99%

Recent Advances in Thin Film Electronic Devices

2022

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Section: Active Layer Thin Films Prepared By Sol-gel Methodsmentioning

confidence: 99%

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

et al. 2021

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The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. Laser treatment has the advantages of high energy, fast speed, less damage to the substrate and controllable treatment area, which is more suitable for flexible and large-scale roll-to-roll preparation than thermal treatment. This paper mainly introduces the basic principle of active layer thin films prepared by laser treatment solution, including laser photochemical cracking of metastable bonds, laser thermal effect, photoactivation effect and laser sintering of nanoparticles. In addition, the application of laser treatment in the regulation of MOS-TFT performance is also described, including the effects of laser energy density, treatment atmosphere, laser wavelength and other factors on the performance of active layer thin films and MOS-TFT devices. Finally, the problems and future development trends of laser treatment technology in the application of metal oxide semiconductor thin films prepared by solution method and MOS-TFT are summarized.

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Improvement of physical properties of IGZO thin films prepared by excimer laser annealing of sol–gel derived precursor films

Cited by 33 publications

References 43 publications

Bias-Switchable Photodetector from Broad-Band to UV-Selective Detection Mode Leveraging Nanolayered Dual-Schottky Junction

Bias-Switchable Photodetector from Broad-Band to UV-Selective Detection Mode Leveraging Nanolayered Dual-Schottky Junction

Recent Advances in Thin Film Electronic Devices

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

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