Improvement of metal-semiconductor-metal GaN photoconductors

Huang, Zhongjie; Mott, D. B.; Shu, P.; Chen, J. C.; Wickenden, D. K.

doi:10.1007/s11664-997-0173-x

Cited by 13 publications

(3 citation statements)

References 10 publications

(1 reference statement)

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“…The characteristics of current photoconductor devices include AlGa1N detectors over the entire range and demonstration of gain mechanism in a metal-semiconductor-metal detector by using interdigitated contact design with a gain over 3000 A/W. 33 Most of the research on UV photodetectors has recently been directed toward the demonstration of AlGa1N basedp-n and p-i-n junction photodiodes, which present the capability of tailoring the cut-off wavelength by controlling the alloy composition and thus the bandgap energy of the active layer. A full range of AlGa1 N p-i-n photodiodes has been demonstrated with a cut-offwavelength continuously tunable from 227 to 365 urn, corresponding to an Al concentration in the range O7O %38394O41 This can be seen in Figure 2 where the current responsivity of these detectors at room temperature is shown.…”

Section: Doping Of Ill-nitridesmentioning

confidence: 99%

Wide-bandgap III-nitride semiconductors: opportunities for future optoelectronics

Park¹

2001

SPIE Proceedings

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The world at the end of the 20th Century has become "blue". Indeed, this past decade has witnessed a "blue rush" towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide bandgap IIINitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and ofcommercial violet LDs, at the very end ofthis decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.

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Section: Doping Of Ill-nitridesmentioning

confidence: 99%

Wide-bandgap III-nitride semiconductors: opportunities for future optoelectronics

Park¹

2001

SPIE Proceedings

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“…Such materials and their ternary and quaternary alloy cover the deep-to mid-UV range for devices, such as light-emitting diodes (LEDs), laser diodes (LDs), and UV detectors. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] At present, UV detectors are one of the most attractive devices and several research groups have reported photoconductive, 11,12) nitridebased pin-type, 10,13) and Schottky-based metal-semiconductor-metal (MSM) photodetectors. 14,15) However, GaN-based UV detectors needed an external amplifier or a field effect transistor (FET) structure to amplify weak signals, to reduce leak current, and to enhance a low signal-to-noise ratio (SNR).…”

Section: Introductionmentioning

confidence: 99%

Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor

Lee

Matsuno

Hashimoto

et al. 2012

Jpn. J. Appl. Phys.

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Au/n-GaN Schottky barrier diode combined with Si-charge transfer type signal processor was investigated to realize intelligent UV sensors with low noise and high sensitivity. A 10-nm-thick Au was used for the semitransparent Schottky contact. The dark current–voltage characteristic of the Schottky barrier diode exhibited the ideal factor of 1.28 and barrier height of 1.1 eV. The sensitivity of 26.3 mA/W was obtained at a wavelength of 296 nm for 12 µW/mm2 UV irradiation power. Furthermore, the Au/n-GaN Schottky barrier diode was connected with the Si-charge transfer type signal processor to examine the effectiveness of the combined device for a UV detector. The processor was driven by a programmable function generator. Using the open-circuit voltage V oc as the input signal, 350 mV output was achieved in a single integration cycle. The signal from the Schottky barrier diode was successfully amplified by accumulation operation of the Si-charge transfer type signal processor.

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“…Several groups have reported the characterization of photoconductive [3][4][5][6], photovoltaic positiveintrinsic-negative (p-i-n) [7] nitride-based photodetectors and Schottky-based metal-semiconductormetal (MSM) photodetectors [8,9]. In contrast, just a very few papers have been published on the characterization of UV detectors working at temperature as high as 700 K. In this work we have studied the role of excitons in two different low barrier metal-semiconductor-metal (MSM) GaN-based UV photodetectors in the temperature range between 300 K and 700 K, by analyzing the temporal response of the devices to short pulses on the millisecond time scale.…”

Section: Introductionmentioning

confidence: 99%

Role of excitons in the persistent photocurrent of GaN‐based MSM detectors

Vittorio

Potı̀

Todaro³

et al. 2004

phys. stat. sol. (c)

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In this work we have studied the role of excitons in two different low barrier metal-semiconductor-metal (MSM) GaN-based UV photodetectors at high temperature. The active material of the two MSM devices consists of bulk GaN grown by metal organic chemical vapour deposition (MOCVD), and of an AlGaN/GaN heterostructure forming a two-dimensional electron gas (2DEG) grown by molecular beam epitaxy/magnetron sputtering epitaxy (MBE/MSE) system. The response of the devices has been characterized at the wavelength of 325 nm (He-Cd laser) as a function of the temperature in the range between room temperature and 700 K. The Arrhenius plot obtained by the decay times of the photocurrent allowed us to calculate the activation energies of some trapping mechanisms responsible of the persistent photocurrent (PPC). This shows that in both device the GaN excitonic resonances provide the most important contribution to the PPC on the millisecond time scale at low temperature.

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Improvement of metal-semiconductor-metal GaN photoconductors

Cited by 13 publications

References 10 publications

Wide-bandgap III-nitride semiconductors: opportunities for future optoelectronics

Wide-bandgap III-nitride semiconductors: opportunities for future optoelectronics

Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor

Role of excitons in the persistent photocurrent of GaN‐based MSM detectors

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