Improvement of mechanical and electrical stabilities of flexible organic thin film transistor by using adhesive organic interlayer

Seol, Y. G.; Lee, Nae‐Eung; Park, S.H.; Bae, Jung Yun

doi:10.1016/j.orgel.2008.02.003

Cited by 27 publications

(4 citation statements)

References 28 publications

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“…As previously reported by our group, the variation of the gate leakage current in the cyclically bent device is difficult to evaluate, due to the delamination between the layers. 1,3,6 On the other hand, the change in the I G /I GO value of the multistack encapsulated device was smaller than that of the unencapsulated device, probably due to the reduced delamination between the layers caused by the reduction in the mechanical strain near the electrode interfaces afforded by the multistack encapsulation.…”

Section: Resultsmentioning

confidence: 95%

“…One of the critical issues for the application of organic fieldeffect transistors (OFETs) in flexible electronic systems is their electrical instability under repetitive mechanical deformation. For example, electrical instability, such as the degradation of the current on/ off ratio (I on /I off ), [1][2][3] increase in the leakage current, 1,4,7 shift of the threshold voltage, 1,4,5 and hysteresis, 4,5 has been observed during mechanical bending. The electrical degradation of the devices under mechanical bending is exacerbated by the cracking of the active and passive layers, as well as the delamination in between them.…”

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confidence: 99%

“…The electrical degradation of the devices under mechanical bending is exacerbated by the cracking of the active and passive layers, as well as the delamination in between them. 3,4,6,8 Especially, the semiconducting pentacene layer used as the active channel material in cyclically bent pentacene OFETs was found to be mechanically and electrically unstable in the ambient atmosphere, due to the doping effects caused by O 2 and H 2 O. 1,4,5,7 To minimize the electrical instability of flexible OFETs during their service life, the chemical interaction of the active layers with the reactive molecules in the atmosphere needs to be minimized.…”

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confidence: 99%

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Improvement of Mechanical and Electrical Stability of Flexible Organic Field-Effect Transistors by Multistack Hybrid Encapsulation

Seol

Heo

Park

et al. 2011

J. Electrochem. Soc.

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In pentacene organic field-effect transistor (OFET) devices without encapsulation, the off-state current and voltage hysteresis quickly increase during cyclic bending, due to the cracking of the pentacene layer. As a result, the doping effects caused by O2 and H2O in the atmosphere exacerbate their electrical instability. In order to mitigate this aggravation of the electrical instability of unencapsulated pentacene OFETs under cyclic bending, flexible multistack hybrid encapsulation by plasma-polymerized methylcyclohexane (MCH) and atomic-layer deposited Al2O3 layers is investigated. With multistack hybrid encapsulation, the electrical stabilities of the OFETs are improved significantly with a negligible change in the voltage hysteresis and stable off-state current, due to the enhanced protection of the active layers in the device from the atmosphere.

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Section: Resultsmentioning

confidence: 95%

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confidence: 99%

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confidence: 99%

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Improvement of Mechanical and Electrical Stability of Flexible Organic Field-Effect Transistors by Multistack Hybrid Encapsulation

Seol

Heo

Park

et al. 2011

J. Electrochem. Soc.

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“…[9][10][11][12] The degradation of the electrical performance of flexible OTFTs subjected to repetitive mechanical bending stress reportedly results from cracks in the organic semiconductor layer and metal electrodes, as well as delamination between them. [13][14][15] Moreover, the stability of flexible pentacene-based OTFTs without a passivation layer can also be influenced by ambient air (i.e., the doping effects of moisture and oxygen). 1,16) Therefore, it was assumed that the repetitive bending stress and ambient air stress were the dominant factors affecting the stability of flexible OTFTs.…”

Section: Introductionmentioning

confidence: 99%

Correlation between ambient air and continuous bending stress for the electrical reliability of flexible pentacene-based thin-film transistors

Fan

Lin

Peng

et al. 2014

Jpn. J. Appl. Phys.

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This study investigated how continuous bending stress affects the electrical characteristics of pentacene-based organic thin-film transistors (OTFTs) with poly(4-vinylphenol) (PVP) gate insulator in a vacuum and in ambient air. In tension mode, the strain direction of the fabricated devices was perpendicular to the device channel length. The OTFT devices that were bent in a vacuum exhibited a decreased on current because of cracking in the pentacene channel layer, which can obstruct the transport of charge carriers and deteriorate the on current of the OTFTs. The OTFT devices that were bent in ambient air exhibited a slightly decreased on current and considerably increased off current and subthreshold swing (SS). It was assumed that air moisture passed through the pentacene cracks into the interface between the PVP and pentacene layer, thereby yielding an increase in polar moisture traps, and leading to an increase in the conductivity of the pentacene, thus yielding a slightly decreased on current and considerably increased off current and SS.

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Multilayer Integration for Organic Thin‐Film Transistors

Guo

Huang

Ouyang

et al. 2021

Digital Encyclopedia of Applied Physics

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The organic thin‐film transistor (OTFT) owns advantages of low processing temperature and excellent mechanical flexibility for creating truly flexible or stretchable electronics on arbitrate substrates. Beyond extensive research efforts in organic semiconductor (OSC) materials, stacking of the OSC and other layers for high performance OTFTs and circuit integration in a manufacturable way becomes vital. In this article, the advantages of OTFTs over inorganic counterparts are discussed in details. Then the suitable devices structures and multi‐layer material stacks for integration are introduced. The key processes for OSC deposition, device multi‐layer stacking, and especially OSC patterning are described. Finally, the circuit integration techniques, including not only the process for formation of via interconnection but also the circuit styles and integration architectures, are reviewed.

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Improvement of mechanical and electrical stabilities of flexible organic thin film transistor by using adhesive organic interlayer

Cited by 27 publications

References 28 publications

Improvement of Mechanical and Electrical Stability of Flexible Organic Field-Effect Transistors by Multistack Hybrid Encapsulation

Improvement of Mechanical and Electrical Stability of Flexible Organic Field-Effect Transistors by Multistack Hybrid Encapsulation

Correlation between ambient air and continuous bending stress for the electrical reliability of flexible pentacene-based thin-film transistors

Multilayer Integration for Organic Thin‐Film Transistors

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