Improvement of kink-free output power by using highly resistive regions in both sides of the ridge stripe for 980-nm laser diodes

Simulation of a ridge-type semiconductor laser with transversal diffraction gratings

“… 2003 ), highly resistive regions in both sides of the ridge stripe (Yuda et al. 1998 ), incorporation of a graded V-shape layer (Qiu et al. 2005 ), optical antiguiding layers (Shomura et al.…”

Simulation of a Ridge-Type Semiconductor Laser with Transversal Diffraction Gratings

“…To achieve high light coupling efficiency between the high power 980-nm semiconductor lasers and the single mode Er 3+ -doped optical fibers, high kink level or kink-free operation of the high power 980-nm semiconductor lasers is needed. To increase the kink level in the ridge structures, lossy metal layers [3], highly resistive regions in both sides of the ridge stripe [4], incorporation of a graded V-shape layer [5], optical antiguiding layers [6,7], separate confinement of carriers and horizontal transverse mode [8], and horizontal coupling of horizontal transverse modes by a groove in the mesa [9] have been studied.…”

Simulation of a ridge-type semiconductor laser with horizontal coupling of lateral modes

“…As a result, to obtain high fiber-coupled optical power, high kink levels or no kinks are required. To date, to increase the kink levels, coupling of the optical field to the lossy metal layers outside the ridge [3], highly resistive regions in both sides of ridge stripe [4], and incorporation of a graded Vshape layer [5] were investigated. To increase the kink level further, a ridge structure with optical antiguiding layers [6], [7] and a ridge structure with separate confinement of carriers and horizontal transverse mode [8] have been proposed.…”