2013
DOI: 10.1007/s11082-013-9821-y
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Simulation of a ridge-type semiconductor laser with horizontal coupling of lateral modes

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Cited by 5 publications
(2 citation statements)
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“…Layer parameters which are summarized in Table 1 are the same as those described in Refs. Shomura ( 2008 ), Yoshida ( 2009 ), Kato ( 2013 ), Chai and Numai ( 2014 ). Lasing characteristics are simulated by using a device simulation software ATLAS (Silvaco) in which Poisson’s equations and Helmholtz equation are solved with a finite element method.…”
Section: Structure and Simulation Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…Layer parameters which are summarized in Table 1 are the same as those described in Refs. Shomura ( 2008 ), Yoshida ( 2009 ), Kato ( 2013 ), Chai and Numai ( 2014 ). Lasing characteristics are simulated by using a device simulation software ATLAS (Silvaco) in which Poisson’s equations and Helmholtz equation are solved with a finite element method.…”
Section: Structure and Simulation Modelmentioning
confidence: 99%
“… 2008 ; Yoshida and Numai 2009 ), separate confinement of carriers and horizontal transverse mode (Kato et al. 2013 ), and horizontal coupling of horizontal transverse modes by a groove in the mesa (Chai and Numai 2014 ) have been studied.…”
Section: Introductionmentioning
confidence: 99%