Improvement of InP crystalline perfection by He+-implantation and subsequent annealing

Raman scattering characterization and electron phonon coupling strength for MeV implanted InP(111)

“…The widths of TO and LO modes, after the fluence of 1 × 10 13 ions/cm 2 , are 30 and 20 cm −1 , respectively. In contrast, much smaller and same linewidths for LO and TO modes (∼ 7 cm −1 ) have been observed after keV implantation at this fluence [15].…”

“…Raman Scattering, thus, is a powerful tool for investigating and monitoring the radiation induced lattice modifications during ion implantation. [13,14,15,16,17,18,19,20,21,22].…”

“…Moreover, in all these studies keV implantation energies were applied for lattice modifications. There is one report on Raman scattering study of ion modification in InP(111) but for low energy keV implantation with He ions [15].…”

“…Both LO and TO modes being allowed for InP(111), we have been able to investigate the evolution of both these modes as a function of ion fluence after MeV implantation. A few studies have investigated the modifications in InP crystals after implantations by Raman scattering technique [13,14,15,16,17,18,19,20,21,22]. However, all these studies investigated the (100) InP where TO mode is forbidden.…”

“…Moreover, in all these studies keV implantation energies were applied for lattice modifications. There is one report on Raman scattering study of ion modification in InP(111) but for low energy keV implantation with He ions [15]. For InP, phonon dispersion studies indicate [23,24] that LO branch is almost as flat as TO branch for the entire Brillouin zone.…”