Photoluminescence study of growth-related and processing-induced defects in indium phosphide

Abstract

Low-temperature photoluminesccnce (PL) spectra of 100 keV He+-implanted n-InP single crystals as well as of 5 MeV a-irradiated n-InP crystals and epilayers have been studied. The radiationtreatment-induced decrease in intensity of bound-excitonic emission was found to be more pronounced than that of free-exciton recombination and luminescence related to deep levels. A new band at 1.399eV was observed in a-irradiated InP epilayers and attributed to defect complexes involving Inp antisite. The influence of post-implantation annealing in the temperature interval 400to 750 "C upon PL characteristics of He+-implanted n-InP crystals is reported. 2, Merckstr. 25, D-64283 Darmstadt, Germany. 3, Academiei str. 5, 277028 Kishinev, Moldova. 36*