Improvement of Ferroelectricity and Reliability in Hf0.5Zr0.5O2 Thin Films With Two-Step Oxygen Vacancy Engineering

Su, Mingji; Gao, Shifan; Weng, Zeping; Liang, Zhao; Lee, Choonghyun; Zhao, Yi

doi:10.1109/led.2022.3179489

Cited by 10 publications

(7 citation statements)

References 26 publications

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Section: Electrode–ferroelectric Interfacesmentioning

confidence: 99%

“…Modification of the annealing process of fluorite-structured ferroelectric thin films could also be a strategy to improve the reliability of HfO 2 thin films. Figure (e) and (f) show the endurance test results and leakage current density–film thickness plot of the TiN/Hf 0.5 Zr 0.5 O 2 /TiN capacitors annealed using a two-step process . In the first step, annealing for crystallization is performed under oxygen-deficient conditions.…”

Section: Electrode–ferroelectric Interfacesmentioning

confidence: 99%

“…Figure 8(e) and (f) show the endurance test results and leakage current density−film thickness plot of the TiN/Hf 0.5 Zr 0.5 O 2 /TiN capacitors annealed using a two-step process. 77 In the first step, annealing for crystallization is performed under oxygen-deficient conditions. Generally, the annealing process is completed in the first step, with Hf 0.5 Zr 0.5 O 2 thin films exhibiting high oxygen vacancy concentrations.…”

Section: Strategies To Resolve the Current Issuesmentioning

confidence: 99%

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Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

et al. 2023

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Ferroelectric fluorite-structured oxide thin films have attracted increased interest from both academia and industry because of their superior scalability�in which their ferroelectric properties can be maintained even below 10 nm thickness�and excellent compatibility with current complementary metal−oxide− semiconductor technology. Regarding recent efforts to downscale the technology node of semiconductor processing, the emergence of ferroelectric properties in fluorite-structured oxide thin films at small length scales is of particular interest. As the length scale of the fluorite-structured oxide thin films reaches the atomic scale, the contribution of the interfacial layer to the properties naturally increases. In particular, the quality and type of interfacial layer, as well as the reaction chemistry in response to the electric field, play a major role in determining the properties of the devices. Consequently, understanding the chemistry of ferroelectric−electrode and ferroelectric−semiconductor interfaces is crucial for their use in industrial applications in the near future. In this context, emerging semiconductor devices based on fluorite-structured oxide ferroelectrics, including ferroelectric field-effect transistors, ferroelectric random-access memories, and ferroelectric tunnel junctions, and the impact of interface chemistry in the devices are reviewed in detail.

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Section: Electrode–ferroelectric Interfacesmentioning

confidence: 99%

Section: Electrode–ferroelectric Interfacesmentioning

confidence: 99%

Section: Strategies To Resolve the Current Issuesmentioning

confidence: 99%

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Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

et al. 2023

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“…oxygen vacancies) concentration increases at the interface between film and electrode. The oxygen vacancies in the HfO 2 -based films could lead to drop of reliability such as high leakage current, resulting in an early breakdown [131][132][133]. Consequently, the compromise between film thickness and crystallization temperature remains problematic.…”

Section: Current Status Of Ultra-thin Hfo 2 -Based Ferroelectric Filmsmentioning

confidence: 99%

A perspective on the physical scaling down of hafnia-based ferroelectrics

et al. 2023

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HfO2-based ferroelectric thin films have attracted significant interest for semiconductor device applications due to their compatibility with complementary metal oxide semiconductor (CMOS) technology. One of the benefits of HfO2 based ferroelectric thin films is their ability to be scaled to thicknesses as low as 10 nm while retaining their ferroelectric properties; a feat that has been difficult to accomplish with conventional perovskite-based ferroelectrics using CMOS-compatible processes. However, reducing the thickness limit of HfO2-based ferroelectric thin films below the sub-5-nm thickness regime while preserving their ferroelectric property remains a formidable challenge. This is because both the structural factors of HfO2, including polymorphism and orientation, and the electrical factors of HfO2-based devices, such as the depolarization field, are known to be highly dependent on the HfO2 thickness. Accordingly, when the thickness of HfO2 drops below 5 nm, these factors will become even more crucial. In this regard, the size effect of HfO2-based ferroelectric thin films is thoroughly discussed in the present review. The impact of thickness on the ferroelectric property of HfO2-based thin films and the electrical performance of HfO2-based ferroelectric semiconductor devices, such as ferroelectric random access memory, ferroelectric field-effect-transistor, and ferroelectric tunnel junction, is extensively discussed from the perspective of fundamental theory and experimental results. Finally, recent developments and reports on achieving ferroelectric HfO2 at sub-5 nm thickness regime and their applications are discussed.

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“…[6][7][8][9][10][11] The combination of a statistical method and physical analyses for various structures of FE-HfO 2 -based devices suggests that oxygen defects at the interface between the FE-HfO 2 and the electrodes make difference in a lifetime. 8,12,13) However, the impact of device topography on TDDB has not yet been fully clarified.…”

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confidence: 99%

Dielectric breakdown behavior of ferroelectric HfO₂ capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

Itoya,

Fujiwara,

Bareille

et al. 2024

Jpn. J. Appl. Phys.

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The in-situ laser-based photoemission electron microscopy (laser-PEEM) observation with time dependent dielectric breakdown (TDDB) measurements of TiN/Hf0.5Zr0.5O2(HZO)/TiN ferroelectric capacitors were performed to reveal the dielectric breakdown (DB) mechanism. We succeeded in visualizing the hard DB spots through the top electrode. We found that capacitors with short- and long-lifetime distribution were broken down near and far from the edge of the capacitors, respectively. This indicates that DB is either topography-dependent or film quality-dependent. This work demonstrates the effective method of detecting DB in a non-destructive manner to provide an insight for achieving higher endurance of HfO2-based ferroelectric capacitors.

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Improvement of Ferroelectricity and Reliability in Hf_0.5Zr_0.5O₂ Thin Films With Two-Step Oxygen Vacancy Engineering

Cited by 10 publications

References 26 publications

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

A perspective on the physical scaling down of hafnia-based ferroelectrics

Dielectric breakdown behavior of ferroelectric HfO₂ capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

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Improvement of Ferroelectricity and Reliability in Hf0.5Zr0.5O2 Thin Films With Two-Step Oxygen Vacancy Engineering

Cited by 10 publications

References 26 publications

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

A perspective on the physical scaling down of hafnia-based ferroelectrics

Dielectric breakdown behavior of ferroelectric HfO2 capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

Contact Info

Product

Resources

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Improvement of Ferroelectricity and Reliability in Hf_0.5Zr_0.5O₂ Thin Films With Two-Step Oxygen Vacancy Engineering

Dielectric breakdown behavior of ferroelectric HfO₂ capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy