Improvement of electrical properties of ZnS/CdTe-HgCdTe interface by (NH4)2S treatment

Saini, Ajay Kumar; Srivastav, Vanya; Gupta, Shrish C.; Sharma, B. L.; Asthania, Meenakshi; Singh, Nilima; Gaur, Shailendra Kumar; Meena, Vijay Singh; R.K.Thakur,; Saraswat, Chanchal; Sharma, Varun; Sharma, R. K.

doi:10.1016/j.infrared.2019.102988

Cited by 9 publications

(2 citation statements)

References 29 publications

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“…Пассивация поверхности КРТ, как правило, осуществляется диэлектриком либо широкозонным полупроводником, наносимым методами физического либо химического осаждения из газовой фазы [4][5][6][7][8][9], однако такие методы, во-первых, зачастую сопровождаются нагревом подложки в вакууме, а во-вторых, могут приводить к физическому перемешиванию и химическому взаимодействию осаждаемого материала с КРТ. Работы по развитию или поиску и исследованию новых методик пассивации CdHgTe остаются актуальными до сих пор [10][11][12][13][14][15][16][17].…”

Section: Introductionunclassified

Анализ вольт-фарадных характеристик МДП-структур с ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- на n- и p-CdHgTe, стабилизированном сверхтонким собственным оксидом

Закиров¹,

Кеслер²,

Сидоров³

et al. 2022

Физика И Техника Полупроводников

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Capacitance−voltage characteristics of metal dielectric semiconductor structures with atomic layer deposition Al2O3 on n- and p-Cd0.22Hg0.78Te (with and without a surface graded-gap layer) preliminary oxidized in oxygen glow discharge plasma (with the resulting oxide thickness of 2 nm) have been studied. The obtained structures reveal the positive fixed charge with a density of ∼ (1−6) · 10^11 cm^(−2). The ratio between a slow surface states density and a surface band gap width is almost independent on graded-gap layer presence, with the value of ∼ (4−8) · 10^11 cm^(−2) · eV^(−1). The proposed passivation approach provides near-ideal low-frequency capacitance-voltages characterized by weak influence of fast surface states. Films of CdHgTe grown without the graded-gap surface layer are proved to be much more sensitive to the process of oxidation in glow discharge plasma.

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Section: Introductionunclassified

Анализ вольт-фарадных характеристик МДП-структур с ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- на n- и p-CdHgTe, стабилизированном сверхтонким собственным оксидом

Закиров¹,

Кеслер²,

Сидоров³

et al. 2022

Физика И Техника Полупроводников

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“…However, such methods, first, often involve substrate heating in vacuum and, second, may lead to physical mixing and chemical interaction between the deposited material and MCT. The research into refinement of the existing CdHgTe passivation techniques and development and characterization of new ones still remains topical [10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Studying C-V characteristics of MIS structures with ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- on n- and p-CdHgTe stabilized with ultra-thin native oxide

et al. 2022

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Capacitance--voltage characteristics of metal dielectric semiconductor structures with atomic layer deposition Al2O3 on n- and p-Cd0.22Hg0.78Te (with and without a surface graded-gap layer) preliminary oxidized in oxygen glow discharge plasma (with the resulting oxide thickness of 2 nm) have been studied. The obtained structures reveal the positive fixed charge with a density of ~(1-6)·1011 cm-2. The ratio between a slow surface states density and a surface band gap width is almost independent on graded-gap layer presence, with the value of ~(4-8)·1011 cm-2·eV-1. The proposed passivation approach provides near-ideal low-frequency capacitance-voltages characterized by weak influence of fast surface states. Films of CdHgTe grown without the graded-gap surface layer are proved to be much more sensitive to the process of oxidation in glow discharge plasma. Keywords: mercury cadmium telluride, film, surface states, plasma.

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Electrical properties of plasma-free ultra-low-temperature ALD ZnS passivation on p-type HgCdTe

Cui

Sun

Wang

et al. 2021

Infrared Physics & Technology

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Improvement of electrical properties of ZnS/CdTe-HgCdTe interface by (NH4)2S treatment

Cited by 9 publications

References 29 publications

Анализ вольт-фарадных характеристик МДП-структур с ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- на n- и p-CdHgTe, стабилизированном сверхтонким собственным оксидом

Анализ вольт-фарадных характеристик МДП-структур с ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- на n- и p-CdHgTe, стабилизированном сверхтонким собственным оксидом

Studying C-V characteristics of MIS structures with ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- on n- and p-CdHgTe stabilized with ultra-thin native oxide

Electrical properties of plasma-free ultra-low-temperature ALD ZnS passivation on p-type HgCdTe

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