Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature

Liu, Jia; Liu, Bin; Zhang, Xisheng; Guo, Xiaojia; Liu, Shengzhong

doi:10.1016/j.tsf.2017.03.050

Cited by 5 publications

(2 citation statements)

References 32 publications

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“…The textured substrate has been widely employed in the design of poly-Si solar cells to achieve superior photovoltaic performance. [1,2,3] However, despite the advantages of utilizing textured substrates, it has been observed that the photovoltaic performance of poly-Si solar cells fabricated on highly textured substrates is significantly degraded. This deterioration is attributed to changes in the microstructure of the poly-Si photovoltaic layer caused by the textured substrate.…”

Section: Introductionmentioning

confidence: 99%

Transmission Electron Microscope Analysis of Polycrystalline Silicon for Thin Film Solar Cells

Muhida,

Riza,

Pratowo

et al. 2024

JMNM

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This research uses a transmission electron microscopy (TEM) approach to analyze the deterioration of the crystallinity of poly-Si placed on the textured substrate. On the textured substrate, we created a poly-Si photovoltaic film with a RMS roughness, σ of 64 nm. Based on TEM findings, we discovered that growth collisions are present in the poly-Si photovoltaic layer that was deposited on the textured substrate with an RMS roughness, σ of 64 nm. The growth direction of the columnar-like grains tends to be perpendicular to the slant slope of the textured substrate. The diagonally oriented columnar growth collisions may be seen clearly at V-shaped formations in the textured substrate. There are also cavities and fissures that were created by the collisions. There are also cavities and fissures that were created by the collisions. The crystallinity of poly-Si grown above the V-shape structure has worsened, as compared to poly-Si grown above the Λ-shape structure, according to the TEM and SAED pictures.

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Section: Introductionmentioning

confidence: 99%

Transmission Electron Microscope Analysis of Polycrystalline Silicon for Thin Film Solar Cells

Muhida,

Riza,

Pratowo

et al. 2024

JMNM

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“…In several reports it was stated that poly-Si thin films prepared using PECVD fabrication showed variations in microstructural properties from mixedcrystal-amorphous states to crystalline states that reached 100% with different crystallographic orientations. [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Morphology and Conductivity Characteristics of Polycrystalline Silicon Thin Film Deposited by Plasma-Enhanced Vapor Deposition in Textured Substrate

Muhida

Riza

Dunan

et al. 2022

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We investigate the characteristics of polycrystalline Silicon (poly-Si) thin films for solar cells produced by very high frequency (VHF) plasma enhanced chemical vapor deposition using a conductive scanning probe microscope (SPM). We measure the surface morphology and local current images are simultaneously of the poly-Si layers with a thickness, d=2 mm, formed on textured Ag/SnO2/glass in the range of RMS based-textured substrate (a) s=85nm, (b) s=42nm and (c) s=2nm respectively. Influences of the substrate texture on the crystal growth as well as the local current flow are discussed. Where we found that the average of local current proportional with crystallinity, where the poly-Si layer that has rich crystallinity indicated low conductivity that yield high local current.

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Bismuth induced crystallization of hydrogenated amorphous silicon thin films: effect of annealing time

Zouini

Khamlich

Dimassi

2019

J Mater Sci: Mater Electron

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Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature

Cited by 5 publications

References 32 publications

Transmission Electron Microscope Analysis of Polycrystalline Silicon for Thin Film Solar Cells

Transmission Electron Microscope Analysis of Polycrystalline Silicon for Thin Film Solar Cells

Morphology and Conductivity Characteristics of Polycrystalline Silicon Thin Film Deposited by Plasma-Enhanced Vapor Deposition in Textured Substrate

Bismuth induced crystallization of hydrogenated amorphous silicon thin films: effect of annealing time

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