Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

Kim, Soo Gil; Ha, Tae Jung; Kim, Seonghyun; Lee, Jae Yeon; Kim, Kyung Wan; Shin, Jung Ho; Park, Yong Taek; Song, Suk Pyo; Kim, Beom Yong; Kim, Wan Gee; Lee, Jong Chul; Lee, Hyun Sun; Song, Jong Ho; Hwang, Eung Rim; Cho, Sang Hoon; Ku, Ja Chun; Kim, Jong‐Il; Kim, Kyu Sung; Yoo, Jun-Hyun; Kim, Hyo Jin; Jung, Hoe Gwon; Lee, Kee Jeung; Chung, Seunghwan; Kang, Jae-Mo; Lee, Jung Hoon; Kim, Hyeong Soo; Gibson, Gary A. P.; Jeon, Yoocharn

doi:10.1109/iedm.2015.7409668

Cited by 18 publications

(8 citation statements)

References 3 publications

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“…For this reason, we select an emerging material NbO2 with an extremely high TC ~808 o C [10] that has superior thermal stability. Recent experiments show the on-chip integration of NbO2 with the CMOS platform [11].…”

Section: Metal-insulator-transition Phenomenonmentioning

confidence: 99%

“…For example, the steep-slope field-effect transistor with strongly correlated oxides as the channel material suffers from the low carrier mobility [13]. The recent revival of MIT device is owing to its capability to serve as a two-terminal selector device for the cross-point memory array to suppress the sneak paths [11]. Different from these works, we propose to use MIT device as the oscillation neuron in neuromorphic computing.…”

Section: Metal-insulator-transition Phenomenonmentioning

confidence: 99%

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Compact oscillation neuron exploiting metal-insulator-transition for neuromorphic computing

Chen

Seo

Cao

et al. 2016

Proceedings of the 35th International Conference on Computer-Aided Design

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The phenomenon of metal-insulator-transition (MIT) in strongly correlated oxides, such as NbO2, have shown the oscillation behavior in recent experiments. In this work, the MIT based two-terminal device is proposed as a compact oscillation neuron for the parallel read operation from the resistive synaptic array. The weighted sum is represented by the frequency of the oscillation neuron. Compared to the complex CMOS integrateand-fire neuron with tens of transistors, the oscillation neuron achieves significant area reduction, thereby alleviating the column pitch matching problem of the peripheral circuitry in resistive memories. Firstly, the impact of MIT device characteristics on the weighted sum accuracy is investigated when the oscillation neuron is connected to a single resistive synaptic device. Secondly, the array-level performance is explored when the oscillation neurons are connected to the resistive synaptic array. To address the interference of oscillation between columns in simple cross-point arrays, a 2-transistor-1-resistor (2T1R) array architecture is proposed at negligible increase in array area. Finally, the circuitlevel benchmark of the proposed oscillation neuron with the CMOS neuron is performed. At single neuron node level, oscillation neuron shows >12.5X reduction of area. At 128×128 array level, oscillation neuron shows a reduction of ~4% total area, >30% latency, ~5X energy and ~40X leakage power, demonstrating its advantage of being integrated into the resistive synaptic array for neuro-inspired computing.

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Section: Metal-insulator-transition Phenomenonmentioning

confidence: 99%

Section: Metal-insulator-transition Phenomenonmentioning

confidence: 99%

Compact oscillation neuron exploiting metal-insulator-transition for neuromorphic computing

Chen

Seo

Cao

et al. 2016

Proceedings of the 35th International Conference on Computer-Aided Design

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“…Year [Ref. ] Bottom Gate (BG) IZO/IGZO 51.4 0.31 0.19 <10 −12 -2008 [26] BG InSnO (ITO)/IGZO 104 ≈0.5 ≈0.25 <10 −12 -2008 [26] BG IZO/InO 79.1 −0.3 0.09 10 −12 -2019 [28] Top gate (TG) IGZO(212)/IGZO(221) 20.3 ≈15 0.35 <10 −12 -2011 [29] BG ITO/ZnSnO (ZTO) 43.2 −1.03 0.25 10 −12 -2011 [30] BG IZO/AlInZnO 52.6 3.4 0.8 10 −10 -2019 [31] BG IZO/HfInZnO ≈40 ≈0 -<10 −12 -2012 [32] BG IZO/ZTO 32.3 0.5 0.12 10 −12 4.1 2014 [39] BG IGZO/GZO 18.92 2.36 0.33 10 −10 -2014 [50] BG (Corrugated) IGZO/ITZO 38.09 −6.72 0.41 10 −10 -2018 [53] BG IZO/AlSnZnInO 60 −1.52 0.16 <10 −12 -2016 [67] BG IGZO:Ti/IGZO 63 1.15 0.07 10 −11 -2014 [68] BG IZO/IZO(High-In)/IZO 50.4 0.31 0.14 <10 −12 5.1 2016 [69] BG IGZO:N/IZO:N 31.9 −5.0 0.8 10 −12 -2017 [70] BG IGZO/IGZO(High-In) 19.6 −0.9 0.10 10 −12 -2020 [71] TG (Self-Aligned) IZO/IGZO 49.5 2.30 0.18 <10 −12 -2021 [72] BG…”

Section: Resultsmentioning

confidence: 99%

“…Though the saturation current of a-IZO/a-IGZO TFTs also increases to near 190 µA but is still lower than the value of a-IZO TFTs, similar to some reports on bilayer AOS TFTs. [26,[30][31][32] It is inferred that the a-IZO/a-IGZO bilayer operates as a mixed singlelayer channel rather than an ideal heterojunction one. Thus, such a gradual heterojunction cannot effectively activate the mobility-boosting mechanism of the AOS heterojunction channel.…”

Section: Resultsmentioning

confidence: 99%

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Wang

Yang

et al. 2022

Adv Elect Materials

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The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS “heterojunction” is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

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“…The threshold selector typically exhibits a hysteresis in I-V as it turns on above a threshold voltage and turns off below a hold voltage. Threshold switching can be achieved in the metal-insulatortransition (MIT) Mott oxide materials such as NbO 2 [34]. The drawback of MIT-based threshold selectors is a relatively small nonlinearity (typically N 100 < ).…”

Section: Selector Device For Cross-point Arraymentioning

confidence: 99%

Emerging Memory Technologies: Recent Trends and Prospects

Chen

2016

IEEE Solid-State Circuits Mag.

428

210

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Recent Trends and Prospectshis tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STT-MRAM), phase-change random access memory (PCRAM), and resistive random access memory (RRAM). Emerging NVM cell characteristics are summarized, and device-level engineering trends are discussed. Emerging NVM array architectures are introduced, including the onetransistor-one-resistor (1T1R) array and the cross-point array with selectors. Design challenges such as scaling the write current and minimizing the sneak path current in cross-point array are analyzed. Recent progress on megabit-to gigabit-level prototype chip demonstrations is summarized. Finally, the prospective applications of emerging NVM are discussed, ranging from the last-level cache to the storage-class memory in the memory hierarchy. Topics of three-dimensional (3D) integration and radiation-hard NVM are discussed. Novel applications beyond the conventional memory applications are also surveyed, including physical unclonable function for hardware security, reconfigurable routing switch for field-programmable gate array (FPGA), logic-in-memory and nonvolatile cache/register/flip-flop

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Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

Cited by 18 publications

References 3 publications

Compact oscillation neuron exploiting metal-insulator-transition for neuromorphic computing

Compact oscillation neuron exploiting metal-insulator-transition for neuromorphic computing

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Emerging Memory Technologies: Recent Trends and Prospects

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