Improvement of a-Si:H device stability and performances by proper design of the interfaces

Martins, Rodrigo; Ferreira, I.; Cabrita, A.; Fortunato, Elvira

doi:10.1016/s0022-3093(99)00909-6

Cited by 5 publications

(8 citation statements)

References 8 publications

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“…Then the samples were flushed with diluted hydrofluoric acid (HF) to strip the covering oxide cap before loading into the vacuum deposition system. The n + , undoped and p + layers of a-Si:H were grown using Plasma Enhanced Chemical Vapor Deposition (PECVD) tool in a single run to minimize defects at the interfaces (Martins et al, 2000). Then 80 nm of ITO was sputtered on the top layer using RF sputtering tool (http://www.mvsystemsinc.com/ researchand-development-services, 2014).…”

Section: Introductionmentioning

confidence: 99%

Comparative study of thin film n-i-p a-Si:H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles

et al. 2015

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In this paper, the effect of gold nanoparticles on n-i-p a-Si:H solar cells with different intrinsic layer (i-layer) thicknesses has been studied. 100 nm and 500 nm i-layer based n-i-p a-Si:H solar cells were fabricated and colloidal gold (Au) nanoparticles dispersed in water-based solution were spin-coated on the top surface of the solar cells. The Au nanoparticles are of spherical shape and have 100 nm diameter. Electrical and quantum efficiency measurements were carried out and the results show an increase in short-circuit current density (J sc ), efficiency and external quantum efficiency (EQE) with the incorporation of the nanoparticles on both cells. J sc increases from 5.91 mA/cm 2 to 6.5 mA/cm 2 ($10% relative increase) and efficiency increases from 3.38% to 3.97% ($17.5% relative increase) for the 100 nm i-layer solar cell after plasmonic enhancement whereas J sc increases from 9.34 mA/cm 2 to 10.1 mA/cm 2 ($7.5% relative increase) and efficiency increases from 4.27% to 4.99% ($16.9% relative increase) for the 500 nm i-layer cell. The results show that plasmonic enhancement is more effective in 100 nm than 500 nm i-layer thickness for a-Si:H solar cells. Moreover, the results are discussed in terms of light absorption and electron hole pair generation.

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Section: Introductionmentioning

confidence: 99%

Comparative study of thin film n-i-p a-Si:H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles

et al. 2015

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“…The increasing a-SiC:H buffer-layer thickness VOC and Jsc were almost constant while the fill factor and efficiency were decreased, where we notice a slight degradation. We note that 2 nm is optimum value for a-SiC:H buffer layer thickness [13][14][15].…”

Section:  Optimizing the P/i Junctionmentioning

confidence: 81%

“…Severals studies confirmed that the solar cells performance is directly related to the absorber layer a-Si:H quality [3,24,26]. Some of these research have been studied the correlation of the mobilitylifetime product the absorber layer with solar cell properties [14,21]. In general, the optimization of absorber layer quality is based on its bandgap engineering and proprieté of material (alloys).…”

Section: Ii2 Absorber Layermentioning

confidence: 99%

A Review of Different Techniques for Improving the Performance of Amorphous Silicon based Solar Cells

Ahmed

Ayat

Bentouba

2019

AJRESD

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Hydrogeneted amorphous silicon (a-Si:H) based solar cells are promising candidates for future developments in the photovoltaic industry. In fact, amorphous silicon technology offers significant advantages including low cost fabrication and possibility to deposition on flexible substrat as well as low temperature fabrication. Much progress has been made since the first single junction cell in amorphous silicon made in 1976 by Carlson and Wronski. However, the performance of the solar cells based on a-Si:H is limited by the high defect density and degradation induced by exposure to light, or Staebler-Wronski effect. To become competitive, the performance of the solar cells based on a-Si:H must be improved. In order to improve the performance of a-Si:H solar cells, much research is directed to optimization techniques. The improvement in performance is therefore based on the optimization of the different layers of the solar cell, in particular, the window layer and the absorber layer (intrinsic). The aim of this work is to give an overview on the different techniques and strategies that is used to improve the performance of solar cell. This work is therefore focus in three main areas: first, optimization of window layer, in particular, the p/i interface using wide band gap alloys such as a-SiC:H, second development of high quality absorber layer using band gap engineering, and alloys such as a-SiGe:H. last, optimizing n-type layer and i/n interface.

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“…The front TCO (SnO2) has been applied for reducing reflection loss. The back metal contact of the device was Al deposited by thermal evaporation [13,14].…”

Section: Simulation Modelmentioning

confidence: 99%

Analysis and Optimization of the Performance of Hydrogenated Amorphous Silicon Solar Cell

Ayat¹,

Meftah²,

Ahmed³

et al. 2021

JNMES

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As the name implies, hydrogenated amorphous silicon (a-Si: H) is composed of silicon atoms which are in a disordered configuration away from all Bravais lattices. The hydrogenated amorphous silicon was manufactured in 1969 where there was a renewed interest in non-hydrogenated amorphous silicon. The use of hydrogenated amorphous silicon as the active material in solar cells inefficient but cheap, is currently much studied. We have presented in this work, the results of the numerical simulation of a-Si: H solar cell by the wxAMPS (Analysis of Microelectronic and Photonic Structures) software and the results were compared with those found experimentally, we find a good agreement. For the efficiency there was a difference of 0.17%. We also study the influence of the thickness of a-Si: H intrinsic layer on the photovoltaic parameters of the solar cell. This allows considering the use of amorphous thinner layers for photovoltaic applications. The efficiency has a maximum value of 7.117 %, corresponding to a intrinsic layer thickness of 560 nm. The using a-Si:H alloys provide a good solution to enhance a-Si:H solar cell performance. The use of a-SiC:H as a p-type window layer in amorphous silicon solar cells is one of its primary photovoltaic applications. The wide band gap of p-a-SiC:H alloy used as window layer for minimizing the optical loss. To improve the efficiency of a-Si:H solar cell, we have study by simulation the performance of the (p) a-SiC:H/(i) a-Si:H/ (n) a-Si:H heterojunction solar cell. The effects of a-SiC:H window layer on the photovoltaic performance have been investigated, where the best initial conversion efficiency of 10.59%.

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Improvement of a-Si:H device stability and performances by proper design of the interfaces

Cited by 5 publications

References 8 publications

Comparative study of thin film n-i-p a-Si:H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles

Comparative study of thin film n-i-p a-Si:H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles

A Review of Different Techniques for Improving the Performance of Amorphous Silicon based Solar Cells

Analysis and Optimization of the Performance of Hydrogenated Amorphous Silicon Solar Cell

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