Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process

Yoon, Mihyun; Im, K. H.; Yang, Jaesung; Lim, Sangwoo

doi:10.1016/j.physb.2009.12.034

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…It has been reported that the absorption coefficient decreased as X c increases. 18 In this work, the absorption coefficient of Si:H films in regions I and II (amorphous region) slightly decreased as R increased from 4 to 19, and the highest absorption coefficient was obtained at [SiH 4 ] ¼ 22 sccm, at which point, the highest deposition rate was obtained. However, the change of absorption coefficient followed the trend of crystalline phase formation rather than that of deposition rate with respect to R, and the absorption coefficient in region III rapidly decreased with increasing R. That is because the absorption coefficient is mainly related to the crystalline state of the Si:H films.…”

Section: Resultsmentioning

confidence: 53%

Effect of Deposition Conditions and Crystallinity of Substrate on Phase Transition of Hydrogenated Si Films

Kim

Yun

Lim

et al. 2011

J. Electrochem. Soc.

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Hydrogenated intrinsic Si (Si:H) thin films were deposited by a plasma-enhanced chemical vapor deposition technique, and the effect of the SiH4 flow rate ([SiH4]) and hydrogen dilution ratio (R) on the crystalline phase transition was studied using Raman spectroscopy and high-resolution transmission electron microscopy. The crystalline volume fraction (X c) was strongly affected by [SiH4] as well as R, and higher X c could be achieved by using a lower [SiH4] at the same R. The dependence of phase transition on the crystallinity of the under-lying layer was also investigated by depositing Si:H films on various substrates. To evaluate the effects of [SiH4] and R on the quality of amorphous-Si:H (a-Si:H) films, etch rates and absorption coefficients were obtained by an H2-plasma etching process and UV-Vis spectrophotometry, respectively. Even under the deposition condition resulting in a-Si:H films, the deposition rate decreased by a factor of 3 to 4.6, and the film density considerably increased as R increased from 4 to 19. On the other hand, the absorption coefficient very slightly decreased with R. The presence of microcrystalline Si:H could be observed only from the samples deposited with R>19 when the film was deposited on amorphous substrate.

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Section: Resultsmentioning

confidence: 53%

Effect of Deposition Conditions and Crystallinity of Substrate on Phase Transition of Hydrogenated Si Films

Kim

Yun

Lim

et al. 2011

J. Electrochem. Soc.

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“…Compared with a-Si:H, lc-Si:H has a smaller band gap and can absorb photons of longer wavelength (near infrared range). 1,19 Therefore, the improved crystallinity of the intrinsic layer in the triple-GPL structure allows more photon absorption in a wider optical spectrum. Moreover, a better crystallinity of the intrinsic layer results in a smaller defect density at the interface between the p-layer and the intrinsic layer.…”

Section: Methodsmentioning

confidence: 99%

Photovoltaic Performance of HWCVD Deposited μc-Si:H Solar Cells Using Graded Hydrogen Dilution Window-Layer

Chiou

Shieh

Pan

et al. 2011

J. Electrochem. Soc.

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The study prepared thin film solar cells using hydrogenated microcrystalline silicon (lc-Si:H) by hot-wire chemical vapor deposition (HWCVD). Hydrogen dilution profiling was used to deposit the boron-doped p-layer on the SnO 2 :F substrate. The lc-Si:H solar cell with triple hydrogen dilution grades in the p-layer has a high photoconversion efficiency of 4.5% as a result of the improvement in the electrical and the antireflection properties of the cell. The short circuit current (J sc ) and the open circuit voltage (V oc ) of the solar cell are 19.7 mA/cm 2 and 450 mV, respectively. The graded hydrogen concentration in the p-layer improves the crystallinity and the antireflection of the absorbing layer (intrinsic layer), thereby enhancing the J sc . The high V oc is ascribed to that a high hydrogen dilution ratio may enhance boron doping in the p-layer leading to the improvement of the V oc .

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Photoluminescence and structural properties of silicon nanostructures grown by layer-by-layer deposition

Goh¹,

Muhamad²,

Rahman³

2012

Optical Materials

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Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process

Cited by 4 publications

References 29 publications

Effect of Deposition Conditions and Crystallinity of Substrate on Phase Transition of Hydrogenated Si Films

Effect of Deposition Conditions and Crystallinity of Substrate on Phase Transition of Hydrogenated Si Films

Photovoltaic Performance of HWCVD Deposited μc-Si:H Solar Cells Using Graded Hydrogen Dilution Window-Layer

Photoluminescence and structural properties of silicon nanostructures grown by layer-by-layer deposition

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