Photoluminescence and structural properties of silicon nanostructures grown by layer-by-layer deposition

Goh, Boon Tong; Muhamad, Muhamad Rasat; Rahman, Saadah Abdul

doi:10.1016/j.optmat.2012.02.002

Cited by 11 publications

(6 citation statements)

References 39 publications

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“…The occurrence of localized surface states in the gap region favors the carrier recombination and reduces the carrier density. Our results on EL and PL are in agreement with other findings [6][7][8][9][10][11]. applied voltage for Ge NWs.…”

Section: Resultssupporting

confidence: 93%

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Luminescence from Silicon and Germanium Nanowires: A Phenomenological Model

Ghoshal

Sahar

Arifin

et al. 2014

AMR

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The room temperature luminescence intensity as a function of the size and the voltage of silicon (Si) and germanium (Ge) nanowires (NWs) having 5 to 30 atoms per wire with diameter ranging from 1.2 nm to 3.5 nm are investigated. The effects of exciton energy states, localized surface states and the quantum confinement are integrated in our phenomenological model to derive an analytical expression for the photoluminescence (PL) and electroluminescence (EL) intensity. By controlling a set of fitting parameters in the model, one can tune the EL and PL peak and intensity. Our results show that both quantum confinement and surface passivation in addition to exciton effects determine the optical and electronic properties of Si and Ge NWs. We observed that the EL and PL intensities occurs at the same energy, however the EL intensity has sharp Gaussian sub peaks and red shifted compared to the PL intensity.

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Section: Resultssupporting

confidence: 93%

“…Now, we use Eq. ( 4) along with exciton contribution to generate PL spectra for different diameters of NWs and compare with experimental findings [7].…”

Section: Theory and Modelmentioning

confidence: 84%

Luminescence from Silicon and Germanium Nanowires: A Phenomenological Model

Ghoshal

Sahar

Arifin

et al. 2014

AMR

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“…The filament temperature of 1450 °C produced a sharp crystalline Si TO band at 520 cm −1 as shown in the inset. Other Si phases are also clearly observed at 150, 300, 620, and 960 cm −1 and are associated with transverse acoustic (TA), longitudinal acoustic (LA), longitudinal optical (LO), Si-H vibration, and second order of Si TO (2TO) modes, respectively [32]. The dominant phase of the crystalline Si component accompanying the small amounts of amorphous component implies the formation of the polycrystalline Si shell.…”

Section: Resultsmentioning

confidence: 99%

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

2015

Self Cite

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Ni-catalyzed Si-based heterostructure nanowires grown on crystal Si substrates by hot-wire chemical vapor deposition (HWCVD) were studied. The nanowires which included NiSi nanowires, NiSi/Si core-shell nanowires, and NiSi/SiC core-shell nanowires were grown by varying the filament temperature Tf from 1150 to 1850 °C. At a Tf of 1450 °C, the heterostructure nanowires were formed by crystalline NiSi and crystalline Si that were attributed to the core and shell of the nanowires, respectively. The morphology of the nanowires showed significant changes with the increase in the filament temperature to 1850 °C. Moreover, the effect of hydrogen heat transfer from the filament temperature demonstrated significant phase changes from NiSi to Ni2Si with increase in the filament temperature. The increased filament temperature also enhanced reactions in the gas phase thus generating more SiC clusters and consequently formed the NiSi/SiC heterostructure core-shell nanowires at Tf of 1850 °C. This paper discusses the role of filament temperatures on the growth and constituted phase change of the nanowires as well as their electrical characteristics.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-015-0980-6) contains supplementary material, which is available to authorized users.

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“…They observed two peaks: one centered in the range 1.3-1.42 eV and the other in the range 2.3-2.6 eV which are due to the QC in nc-Si and oxygen vacancies, respectively, in contrast with the present work. Nc-Si films were synthesized by layer-bylayer method using the rf PECVD technique at different T d (100-400°C) [57]. Those films showed PL spectra at energies of 1.36-1.41, 1.65-1.72 and 1.86-2.09 eV, which are originated from the localized state transitions of a-Si clusters, the QC of the nc-Si embedded within amorphous matrix, and the interface state effect between nc-Si and the a-SiO matrix, respectively [57].…”

Section: Resultsmentioning

confidence: 99%

“…Nc-Si films were synthesized by layer-bylayer method using the rf PECVD technique at different T d (100-400°C) [57]. Those films showed PL spectra at energies of 1.36-1.41, 1.65-1.72 and 1.86-2.09 eV, which are originated from the localized state transitions of a-Si clusters, the QC of the nc-Si embedded within amorphous matrix, and the interface state effect between nc-Si and the a-SiO matrix, respectively [57]. In addition, Chong et al [58] investigated the structural and PL properties of Si nanowires prepared by hot-wire assisted plasma enhanced chemical vapor deposition.…”

Section: Resultsmentioning

confidence: 99%

UV irradiation and H2 passivation processes to classify and distinguish the origin of luminescence from thin film of nc-Si deposited by PECVD technique

Ali

2015

Journal of Alloys and Compounds

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Photoluminescence and structural properties of silicon nanostructures grown by layer-by-layer deposition

Cited by 11 publications

References 39 publications

Luminescence from Silicon and Germanium Nanowires: A Phenomenological Model

Luminescence from Silicon and Germanium Nanowires: A Phenomenological Model

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

UV irradiation and H2 passivation processes to classify and distinguish the origin of luminescence from thin film of nc-Si deposited by PECVD technique

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