Improvement in performance of traveling wave electroabsorption modulator with asymmetric intra-step-barrier coupled double strained quantum wells the active region, segmented transmission-line and mushroom-type waveguide

Abedi, Kambiz

doi:10.1007/s11082-011-9539-7

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…The microwave characteristic of three structures such as characteristic impedance Z C , propagation constant γ have been calculated by high frequency structure simulator (HFSS) [11]. Figure 4 shows the electro/optic response of hybrid TWEAM for three structures of double steps, one step and mushroom-type at Z L (a) 25 Ω, (b) 40 Ω.…”

Section: Introductionmentioning

confidence: 99%

High Performance Hybrid Silicon Evanescent Traveling Wave Electroabsorption Modulators

Abedi

Afrouz

2013

Acta Phys. Pol. A

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In this paper, for the rst time, a high performance hybrid silicon evanescent traveling wave electroabsorption modulator based on asymmetric intra-step-barrier coupled double strained quantum wells active layer is introduced which has double steps at III/V mesa structure. Through this active layer, hybrid silicon evanescent traveling wave electroabsorption modulator will be advantages such as very low insertion loss, zero chirp, high extinction ratio, and large Stark shift and better gures of merit as compared with multiquantum well and intra-step quantum well structures. Furthermore, traveling wave electroabsorption modulator with double steps III/V mesa structure results in a wider bandwidth as compared with one-step III/V mesa and mushroom structures. For the modulator with double steps III/V mesa structure with a 200 µm length, the 3 dB bandwidths are obtained as 132 and 52 GHz for 25 and 40 Ω characteristic impedances, respectively.

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Section: Introductionmentioning

confidence: 99%

High Performance Hybrid Silicon Evanescent Traveling Wave Electroabsorption Modulators

Abedi

Afrouz

2013

Acta Phys. Pol. A

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“…[18,19]. LHTL initially the non-resonant-type one, is perhaps one of the most representative and potential candidates due to its low loss, broad operating frequency band, as well as planar configuration [20,21], which is often related with easy fabrication for N-RI applications in a suite of novel guided-wave [22,23], radiated-wave [24,25], and refracted-wave devices and structures [26][27][28]. In the meanwhile, with the rapid development of nanotechnology and nanoelectronics [29], the integrated circuits and components have minimized towards atomic-scale dimensions [30,31] in the last a few decades.…”

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confidence: 99%

Negative refraction index of the mesoscopic left-handed transmission line in the thermal Fock state

2017

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Negative refractive index (NRI) of the quantized lossless mesoscopic left-handed transmission line (LHTL) is deduced numerically in thermal Fock state. Some specific quantum features of NRI dependent the temperature, frequency of the electromagnetic wave and photon numbers, and quantum fluctuations are shown in the lossless LHTL. The results are significant for the miniaturizing applications of LHTL and quantum circuits. Keywords Negative refractive index · Mesoscopic Left-handed transmission lines · Thermal Fock state 1 Introduction The theoretical speculation of negative refractive index materials (NRM) proposed by V. Veselago[1] in 1968, in which several fundamental phenomena occurring in or in association with NRM were predicted, such as the negative Goos-Hänchen shift[2], amplification of evanescent waves[3], reversals of both Doppler shift and Cerenkov radiation[1], sub-wavelength focusing[4] and so on. Some typical approaches for NRM can be summarized as artificial structures such as metamaterials[5-7] and photonic crystals[8-10], chiral materials[11] and photonic resonant media[12, 13]. Although very exciting from a physics point of view, the artificial structures seem to be of little practical interest for engineering applications because

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High-performance optical wavelength-selective switches based on double ring resonators

Abedi

2013

Optoelectron. Lett.

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Improvement in performance of traveling wave electroabsorption modulator with asymmetric intra-step-barrier coupled double strained quantum wells the active region, segmented transmission-line and mushroom-type waveguide

Cited by 4 publications

References 11 publications

High Performance Hybrid Silicon Evanescent Traveling Wave Electroabsorption Modulators

High Performance Hybrid Silicon Evanescent Traveling Wave Electroabsorption Modulators

Negative refraction index of the mesoscopic left-handed transmission line in the thermal Fock state

High-performance optical wavelength-selective switches based on double ring resonators

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