Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator

Kwak, Sol‐Mi; Kim, Hyeong-Rae; Jang, Hye‐Won; Yang, Ji Ho; Furuta, Mamoru; Yoon, Sung‐Min

doi:10.1016/j.orgel.2019.04.040

Cited by 9 publications

(4 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here, mobility is measured as 22.72 (cm 2 V –1 s –1 ), which is a value comparable to those of top reports on the organic gate dielectric TFTs (Table ). − In addition, the same configuration with a PPx-C dielectric layer also presents excellent device performances in both the linear and saturation regions (Figure S8). All of these results indicate that our PPx dielectrics not only are good candidates to replace SiO 2 layers but can also provide several advantages in terms of low-temperature processing, stable throughput, applicability to various type of semiconductora, and controllable thickness.…”

Section: Results and Discussionmentioning

confidence: 92%

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

Kim

Jang

Bae

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Inorganic materials such as SiO x and SiN x are commonly used as dielectric layers in thin-film transistors (TFTs), but recent advancements in TFT devices, such as inclusion in flexible electronics, require the development of novel types of dielectric layers. In this study, CVD-deposited poly(p-xylylene) (PPx)-based polymers were evaluated as alternative dielectric layers. CVD-deposited PPx can produce thin, conformal, and pinhole-free polymer layers on various surfaces, including oxides and metals, without interfacial defects. Three types of commercial polymers were successfully deposited on various substrates and exhibited stable dielectric properties under frequency and voltage sweeps. Additionally, TFTs with PPx as a dielectric material and an oxide semiconductor exhibited excellent device performance; a mobility as high as 22.72 cm2/(V s), which is the highest value among organic gate dielectric TFTs, to the best of our knowledge. Because of the low-temperature deposition process and its unprecedented mechanical flexibility, TFTs with CVD-deposited PPx were successfully fabricated on a flexible plastic substrate, exhibiting excellent durability over 10000 bending cycles. Finally, a custom-synthesized functionalized PPx was introduced into top-gated TFTs, demonstrating the possibility for expanding this concept to a wide range of chemistries with tunable gate dielectric layers.

show abstract

Section: Results and Discussionmentioning

confidence: 92%

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

Kim

Jang

Bae

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Coatings 2020, 10, x FOR PEER REVIEW 2 of 8 as substitutional defect and causes device instability [13][14][15], therefore, new treatment method to obtain the higher device performance of IGZO based TFTs still has been important issue. In this paper, we suggest the neutron irradiation treatment method to improve of the electrical characteristics on IGZO based TFTs.…”

Section: Methodsmentioning

confidence: 99%

“…To solve these problems, Park et al [11] and Ahn et al [12] demonstrated that the hydrogen ion irradiation method improved the electrical characteristics of IGZO based TFTs at room temperature due to the changes of the electronic structures such as the chemical bonding states, band gap, and the band edge states below the conduction band. Despite advantages such as low temperature and a short treatment time, the hydrogen ion irradiation method has critical problems in that hydrogen can diffuse in an oxide matrix as substitutional defect and causes device instability [13][14][15], therefore, new treatment method to obtain the higher device performance of IGZO based TFTs still has been important issue.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Electrical Performance by Neutron Irradiation Treatment on IGZO Thin Film Transistors

et al. 2020

View full text Add to dashboard Cite

The effects of the neutron irradiation treatment on indium-gallium-zinc oxide (IGZO) are investigated as a function of the neutron irradiation time. With an increase in neutron irradiation time, the oxygen vacancies associated the oxygen deficient states increase, and both shallow and deep band edge states below the conduction band also increase. Moreover, the conduction band offset continuously decreases because of the increase in the oxygen vacancies with increasing the neutron irradiation time. In IGZO TFTs with the neutron irradiation time for 10 s, superior device performance demonstrates such as the lower threshold voltage, higher field effect mobility, smaller sub-threshold gate swing, larger on-off current ratio, and improved bias stability, comparing those of other IGZO TFTs.

show abstract

“…19 A further feature of solution-based devices is the use of polymers as preferred dielectric materials in contrast to the standard metal oxide insulators like HfO x or ZrO x . [20][21][22][23] Polymers are well soluble and can form a layer on the IGZO channel through a low-temperature deposition process without damaging the semiconductor. 22 Although solution-based processes show great promise, they face several critical problems, with IGZO film quality being the major concern.…”

Section: Introductionmentioning

confidence: 99%

A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

Kumaran,

Karsten,

Zharnikov

et al. 2024

J. Mater. Chem. C

View full text Add to dashboard Cite

show abstract

Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator

Cited by 9 publications

References 29 publications

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

Improvement of Electrical Performance by Neutron Irradiation Treatment on IGZO Thin Film Transistors

A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

Contact Info

Product

Resources

About