Improvement of Electrical Performance by Neutron Irradiation Treatment on IGZO Thin Film Transistors

Kwon, Sera; Hong, Jongin; Jun, Byung‐Hyuk; Chung, Kwun‐Bum

doi:10.3390/coatings10020147

Cited by 4 publications

(4 citation statements)

References 23 publications

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Section: Resultsmentioning

confidence: 99%

“…Thus, with increasing Al doping concentration, Eg increases and valence band offset decreases, thereby increasing the conduction band offset (Figure 3c). This result suggests that as the Al doping concentration increases, Vo and carrier concentration decrease [36,37]. To demonstrate the electrical characteristics based on the carrier concentration of the oxide semiconductor, TFTs containing InOx, InAlOx-1, InAlOx-2, and InAlOx-3 with a bottom-gate, top-contact structure were fabricated.…”

Section: Resultsmentioning

confidence: 99%

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Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Na,

Park,

Park

et al. 2024

Nanomaterials

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The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (VTH) and its origin were analyzed by understanding the roles of slow and fast traps in solution-processed oxide TFTs. To control the initial VTH of oxide TFTs, the indium oxide (InOx) semiconductor was doped with aluminum (Al), which functioned as a carrier suppressor. The concentration of oxygen vacancies decreased as the Al doping concentration increased, causing a positive VTH shift in the InOx TFTs. The VTH shift (∆VTH) caused by PBS increased exponentially when VTH was increased, and a distinct tendency was observed as the gate bias stress increased due to a high vertical electric field in the oxide dielectric. In addition, the recovery behavior was analyzed to reveal the influence of fast and slow traps on ∆VTH by PBS. Results revealed that the effect of the slow trap increased as the VTH moved in the positive direction; this occured because the main electron trap location moved away from the interface as the Fermi level approached the conduction band minimum. Understanding the correlation between VTH and PBS instability can contribute to optimizing the fabrication of oxide TFT-based circuits for electronic applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Na,

Park,

Park

et al. 2024

Nanomaterials

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“…Therefore, carrier density inside the a-IGZO layer increases after the SCCO 2 treatment. [22] For the ratio change of V o traps, density of states (DOSs) of the as-deposited and post-treated a-IGZO layers are analyzed by TCAD simulations on a-IGZO TFTs with 19 nm-thickness channel. The detailed simulation model and considered effects are descripted in the Experiment Section.…”

Section: Channel Thickness [Nm]mentioning

confidence: 99%

Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment

Zhang

Chang

et al. 2022

Adv Materials Inter

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Researchers have made various attempts to improve the sputtering a-IGZO films. [2] However, the structural defects induced by the sputtering process often lead to inferior performance and stability for a-IGZO devices, especially under voltage stress. [9] Poor-quality of a-IGZO film has hindered the development of commercial applications for a-IGZO thin film transistor (TFT)based electronics. [10][11][12] Many post-treatments such as annealing, [13] microwave irradiation, [14] plasma treatment, [15][16][17] and supercritical carbon dioxide fluid (SCCO 2 ) treatment [18,19] have been implemented to improve a-IGZO film quality. Compared with other methods, SCCO 2 method is more promising due to its low-temperature process, nondestructive property, ability to remove organic impurities, and restorability from bending. Earlier work [18] has studied the enhancing effect of this treatment on flexible a-IGZO devices. To gain maximum advantage of such technique, an understanding of the carrier mechanism beyond the performance enhancement is important. From oxygen vacancy (V o ) theory, two kinds of V o could exist in the a-IGZO film, namely traps and carriers. [20] The independent analysis for carrier-type V o and trap-type V o has not been verified in detail. Furthermore, the carrier transport mechanism of the post-treated a-IGZO film has not been fully understood yet. These are critical to understand the a-IGZO and realize high-performance devices and circuits based on metal oxide semiconductors.In this work, we design a-IGZO TFTs with different channel thicknesses and treat them using SCCO 2 process to investigate the detailed mechanism of the carrier behavior inside the a-IGZO layer. By comparing the performances of different devices, we analyze the carrier density and transport in a-IGZO. In addition to the traditional X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) characterization, new techniques including Technology Computer Aided Design (TCAD) simulation, layer-by-layer XPS, and sheet resistance measurement are adopted in TFTs for the first time to verify the more accurate carrier mechanism.Amorphous indium gallium zinc oxide (a-IGZO) thin-film quality can be enhanced using supercritical carbon dioxide (SCCO 2 ). How to verify specific and accurate mechanism for the carriers inside an a-IGZO layer before and after the SCCO 2 treatment is worth investigating. This work designs a-IGZO thin film transistors with different channel thicknesses (41, 28, and 19 nm), treats them using SCCO 2 , and analyzes the change in carrier behavior. The effect of the SCCO 2 on both carrier density and carrier transport is investigated using energy band information, Technology Computer Aided Design (TCAD) simulations on density of states and resistance analyses. After the treatment, the thinner channel thickness exhibits better drivability enhancement. That is because of the fewer traps and smoother carrier transportation path resulted from better M−O−M frameworks, and decreased M−OH bonds as ...

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“…Figure 12d shows the absorbance spectrum of 150 nm IGZO layer, with absorbance increasing sharply in UV range while showing zero absorbance in 500-800 nm visible range. Minor absorption at ~400 nm is from sub-band absorption of band edge states [150][151] . As shown in the inset of Figure 12d, absorption coefficient α is the obtained from the following equation [152] :…”

Section: Nanopillar Gaasmentioning

confidence: 99%

Gallium-V antireflective nanostructures by metal-assisted chemical etching for photodetector application

Liao

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Improvement of Electrical Performance by Neutron Irradiation Treatment on IGZO Thin Film Transistors

Cited by 4 publications

References 23 publications

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment

Gallium-V antireflective nanostructures by metal-assisted chemical etching for photodetector application

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