Improved wetting of Al2O3 by molten Sn with Ti addition at 973–1273 K

Sui, Ran; Ju, Chunyan; Zhong, Wei-Rong; Lin, Qiaoli

doi:10.1016/j.jallcom.2017.12.350

Cited by 19 publications

(2 citation statements)

References 26 publications

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“…(1) and (2). As shown in Figure 8a-d, the values of ln(cosθ e -cosθ) are entirely linearly proportional to the isothermal dwell time of Sn-V alloy at 750-900 • C; while the values of dR/dt also exhibit linear with dynamic contact angles only at the early stage of reactive spreading at 750-850 • C, or in the whole spreading process at 900 • C. The controlling mechanism of the spreading of Sn-3V alloy on porous graphite cannot be identified from the spreading kinetics data, especially at 900 • C. By estimating the diffusion coefficient of V in liquid Sn as approximately 10 −9 m 2 /s, the diffusion rate of V atoms in Sn-V droplets can be derived as 10 −4 -10 −5 m/s [34]. Spreading kinetics indicated the maximum spreading rate of Sn-3V droplets on graphite was around 3.4 × 10 −6 m/s (see Figure 8d), which is much less than the estimated diffusion rate of V in Sn liquid.…”

Section: Figure 4a Presents Low-magnification Sem Micrographs Of the Interfacial Microstructures Betweenmentioning

confidence: 99%

“…The controlling mechanism of the spreading of Sn-3V alloy on porous graphite cannot be identified from the spreading kinetics data, especially at 900 °C . By estimating the diffusion coefficient of V in liquid Sn as approximately 10 −9 m 2 /s, the diffusion rate of V atoms in Sn-V droplets can be derived as 10 −4 -10 −5 m/s [34]. Spreading kinetics indicated the maximum spreading rate of Sn-3V droplets on graphite was around 3.4 × 10 −6 m/s (see Figure 8d), which is much less than the estimated diffusion rate of V in Sn liquid.…”

Section: Figure 4a Presents Low-magnification Sem Micrographs Of the Interfacial Microstructures Betweenmentioning

confidence: 99%

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Reactive Infiltration and Microstructural Characteristics of Sn-V Active Solder Alloys on Porous Graphite

et al. 2020

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In this work, the reactive wetting and infiltration behaviors of a newly designed Sn-V binary alloy were comprehensively explored on porous graphite for the first time. It was discovered that 0.5 wt.% addition of V can obviously improve the wettability of liquid Sn on porous graphite and the nominal V contents in Sn-V binary alloys has minor effects on the apparent contact angles wetted at 950 °C. Moreover, the V-containing Sn-V alloys were initiated to spread on porous graphite at ~650 °C and reached a quasi-equilibrium state at ~900 °C. Spreading kinetics of Sn-3V alloy on porous graphite well fitted in the classic product reaction controlled (PRC) model. However, our microstructural characterization demonstrated that, besides vanadium carbide formation, the adsorption of V element at the wetting three-phase contact line spontaneously contributed to the reactive spreading and infiltrating of Sn-V alloys on porous graphite. Meanwhile, the formation of continuous vanadium carbides could completely block the infiltration of Sn-V active solder alloy in porous graphite. Affected by the growth kinetics of vanadium carbides, the infiltration depth of Sn-V alloys in porous graphite decreased at increased isothermal wetting temperatures. This work is believed to provide implicative notions on the fabrication of graphite related materials and devices using novel V-containing bonding alloys.

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Section: Figure 4a Presents Low-magnification Sem Micrographs Of the Interfacial Microstructures Betweenmentioning

confidence: 99%

Section: Figure 4a Presents Low-magnification Sem Micrographs Of the Interfacial Microstructures Betweenmentioning

confidence: 99%