Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

Werner, R.; Petrov, A. Yu.; Miño, Lucero Álvarez; Kleiner, R.; Koelle, D.; Davidson, B. A.

doi:10.1063/1.3581885

Cited by 32 publications

(26 citation statements)

References 24 publications

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“…The x-ray diffraction (XRD) measurements indicated the epitaxial growth of our films, without lattice relaxation. A spinreorientation characterized by the change of the easy axis from the original [1][2][3][4][5][6][7][8][9][10] to [001] was observed in the cooling process when the layer thickness of LCO exceeds 1 nm. This is different from the plain LSMO films which exhibit an easy axis along the [1-10] direction on (110)-LAO.…”

Section: Introductionmentioning

confidence: 99%

“…12,13 In these works, the adopted LSMO films were usually thick (30 nm to 500 nm) and usually focused on the (001)-orientation, for which the lattice strains are fourfold symmetric. However, the (110)-oriented manganite films deserve special attention, because the in-plane lattice strains along the [1][2][3][4][5][6][7][8][9][10] [001] directions are no longer equivalent. This will provide us an opportunity to tune in-plane MA via strain engineering.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3] LSMO is attractive due to its colossal magnetoresistance effect (CMR), 4 high Curie temperature, 5 and its possible application to magnetic tunnel junction devices. 6,7 Unlike the bulk LSMO, the epitaxial LSMO films could be intentionally strained, resulting in a coupling between lattice strains and the spin, orbital, charge degrees of freedom, and finally affect magnetic anisotropy (MA). 8 Suzuki et al have systematically studied the MA of LSMO films on different substrates, 9 and showed that lattice mismatch was the main cause to affect the MA.…”

Section: Introductionmentioning

confidence: 99%

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In-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 heterostructures

et al. 2017

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The interface engineering of the complex oxides with strongly coupled degrees of freedom opens a wide space for the exploration of novel effects. La0.67Sr0.33MnO3 is one of the most typical complex oxides used for atomic level material engineering. Herein we reported an in-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 (LCO/LSMO) bilayers grown on (110)-oriented LaAlO3 substrates. Fixing the LSMO layer thickness to 8 nm and varying the LCO layer from 0 to 8 nm, totally six bilayers were fabricated. Without the LCO layer, the LSMO film exhibits an easy axis along the [1-10] direction. However, when the thickness of the LCO layer exceeds 1 nm, a signature of spin-reorientation appears; the easy axis turns from the [1-10] to the [001] direction below 225 K. This tendency is continuously enhanced by increasing the LCO. We reveal that lattice strains are different along these two directions. The magnetic anisotropy is not only controlled by lattice strain but also by structural distortion at interface. This work shows the great potential of the interface engineering with differently structured oxides for the exploration of novel functional materials.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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In-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 heterostructures

et al. 2017

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“…was investigated in Ref. [11]. LTSLM probes changes in the tunneling conductivity induced by local thermal perturbation, which allows to infer the spatial distribution of the relative magnetization orientation of the two electrodes.…”

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confidence: 99%

“…MTJs with area A J = 5×30 µm 2 were patterned by optical lithography; for details on sample characterization and fabrication see Ref. [11]. Figure 1 of the top and bottom electrode, respectively, is given by the angle Θ.…”

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confidence: 99%

Local tunneling magnetoresistance probed by low-temperature scanning laser microscopy

Werner

Weiler

Петров

et al. 2011

Applied Physics Letters

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Tunneling magnetoresistance (TMR) in a vertical manganite junction was investigated by lowtemperature scanning laser microscopy (LTSLM) allowing to determine the local relative magnetization M orientation of the two electrodes as a function of magnitude and orientation of the external magnetic field H. Sweeping the field amplitude at fixed orientation revealed magnetic domain nucleation and propagation in the junction electrodes. For the high-resistance state an almost single-domain antiparallel magnetization configuration was achieved, while in the low-resistance state the junction remained in a multidomain state. Calculated resistance R calc (H) based on the local M configuration obtained by LTSLM is in quantitative agreement with R(H) measured by magnetotransport.Tunneling magnetoresistance (TMR) is an important effect for spintronics 1 which has been vigorously investigated both theoretically 2,3 and experimentally 4,5 , predominantly to develop new devices such as magnetic random access memories (MRAMs) 6 based on magnetic tunnel junctions (MTJs). In an MTJ, two ferromagnetic electrodes are separated by a thin insulating tunnel barrier. According to the Jullière model 4 , the maximum TMR ratio is TMR J ≡ (R ap − R p )/R p , where R ap and R p is the resistance for antiparallel and parallel orientation of the magnetizations M of the two electrodes, respectively. While integral TMR properties of MTJs have been investigated in detail 7,8 , not much is known about the impact of their magnetic microstructure on the TMR properties. However, both in view of applications and from a fundamental point of view, it is of high interest to identify the spatial dependence of the TMR on the magnetic properties of the electrodes. Nucleation and growth of magnetic domains in ferromagnets has been the focus of many efforts, using techniques such as magneto-optical Kerr, magnetic force, spin-polarized scanning tunneling, spin-polarized scanning electron and photoemission microscopy. 9 Low-temperature scanning laser microscopy (LTSLM) has been used to visualize locally different resistive states in a quasi-1-dimensional La 0.67 Ca 0.33 MnO 3 thin film grain boundary junction, for which it has been shown that the obtained LTSLM signal is directly proportional to the local TMR ratio. 10 These results suggested that LTSLM could also be useful to investigate TMR in vertical MTJs under typical bias conditions and in a wide range of temperatures and magnetic fields. was investigated in Ref. [11]. LTSLM probes changes in the tunneling conductivity induced by local thermal perturbation, which allows to infer the spatial distribution of the relative magnetization orientation of the two electrodes. By varying H, imaging of magnetic domain nucleation and propagation during the field-driven transitions between low-and high-resistive states is possible.The heterostructure samples were grown in situ by molecular beam epitaxy on (001)-oriented STO substrates with 19 nm thick top and bottom LSMO electrodes, separated by 2.3 nm thick STO. A 38...

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Applications of Magnetic Oxides Thin Films and Nanostructures

Solignac

Maroutian

Lecoeur

2017

Nanomagnetism: Applications and Perspectives

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Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

Cited by 32 publications

References 24 publications

In-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 heterostructures

In-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 heterostructures

Local tunneling magnetoresistance probed by low-temperature scanning laser microscopy

Applications of Magnetic Oxides Thin Films and Nanostructures

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