Improved TiN film as a diffusion barrier between copper and silicon

Back-End Deposited Silicon Photonics for Monolithic Integration on CMOS

“…• C [16] in a modern Cu BEOL process. There are reports of aluminum metallization degrading at a budget as low as 1 h at 450…”

Solar selective absorbing coatings TiN/TiSiN/SiN prepared on stainless steel substrates

“…This could be related to the good thermal stability of the TiN/TiSiN/SiN layer, as well as the role that TiN and TiSiN play as diffusion barriers to copper at an elevated temperature [29][30][31]. The stable performance after 2 hours of annealing at high temperatures indicates that the optimized SSACs are probably also suitable for evacuated tube technologies, where the selective coating is working in a low vacuum.…”

Development of homogeneous Pd–Ag alloy membrane formed on porous stainless steel by multi-layered films and Ag-upfilling heat treatment

“…3 shows a schematic illustration of a 6 μm thick multilayered Pd/Ag films used for preventing intermetallic diffusion from the PSS after heat treatment at 873 K for 100 h. In Pd-based composite membranes, microstructures of diffusion barrier films play an important role in the prevention of intermetallic diffusion. Because diffusion depends on the compactness of the films, the barrier performance improves with an increase in the density of the diffusion barrier films [24,25]. The Pd/Ag coating formed by electroless plating has a significantly rough surface layer comprising of irregular particles, voids, and defects that results in intermetallic diffusion of metal support constituents.…”