Strain engineering
can effectively improve the energy band degeneracy
of two-dimensional transition metal dichalcogenides so that they exhibit
good thermoelectric properties under strain. In this work, we have
studied the phonon, electronic, thermal, and thermoelectric properties
of 1T-phase monolayer HfS2 with biaxial strain based on
first-principles calculations combined with Boltzmann equations. At
0% strain, the results show that the lattice thermal conductivity
of monolayer HfS2 is 5.01 W m–1 K–1 and the electronic thermal conductivities of n-type
and p-type doped monolayer HfS2 are 2.94 and 0.39 W m–1 K–1, respectively, when the doping
concentration is around 5 × 1012 cm–2. The power factors of the n-type and p-type doped monolayer HfS2 are different, 29.4 and 1.6 mW mK–2, respectively.
Finally, the maximum ZT value of the n-type monolayer
HfS2 is 1.09, which is higher than 0.09 of the p-type monolayer
HfS2. Under biaxial strain, for n-type HfS2,
the lattice thermal conductivity, the electronic thermal conductivity,
and the power factor are 1.55 W m–1 K–1, 1.44 W m–1 K–1, and 22.9 mW
mK–2 at 6% strain, respectively. Based on the above
factor, the ZT value reaches its maximum of 2.29
at 6% strain. For p-type HfS2, the lattice thermal conductivity
and the electronic thermal conductivity are 1.12 and 1.53 W m–1 K–1 at 7% strain, respectively.
Moreover, the power factor is greatly improved to 29.5 mW mK–2. Finally, the maximum ZT value of the p-type monolayer
HfS2 is 3.35 at 7% strain. It is obvious that strain can
greatly improve the thermoelectric performance of monolayer HfS2, especially for p-type HfS2. We hope that the
research results can provide data references for future experimental
exploration.