Improved thermal stability, interface, and electrical properties of HfO2 films prepared by pulsed laser deposition using <i>in situ</i> ionized nitrogen

Wang, Yi; Wang, Hao; Zhang, Jun; Wang, Hanbin; Ye, Cong; Jiang, Yong; Wang, Qing

doi:10.1063/1.3184577

Cited by 22 publications

(11 citation statements)

References 21 publications

(20 reference statements)

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“…Above results will provide experimentalists with some insights in engineering the Φ eff (or ΔΦ) by controlling the proportion of N 2 and O 2 of the annealing atmosphere. These results are consistent with the prior experimental observations in which Pt/HfO 2 stack after annealing in air or N 2 atmosphere displays a larger Φ eff than that as-deposited state [22], and indicates N is an efficient dopant for p-type MOSFETs.…”

Section: Impact Of Interface N On the Effective Work Functionsupporting

confidence: 94%

Impact of nitrogen on effective work function of metal/oxide stack: A first-principles study of the Pt/HfO2 interface

Liu

Ouyang

Durakiewicz

et al. 2015

Solid State Communications

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a b s t r a c tModulating the effective work function (Φ eff ) of metal electrodes is both crucial and challenging in metal-oxide-semiconductor transistors. The introduction of atomic dopants is shown to be an effective method to modify the interface Φ eff . Here we apply the first principles calculations to systematically explore the impact of incorporation of the non-metallic ambient gas element N on the effective work function of a Pt/HfO 2 interface. We find that Φ eff is very closely related to the doped atomic position and concentration of the incorporated N atoms. The incorporation is favored at the interface near HfO 2 side, and it can significantly increase the interface Φ eff for the Pt/HfO 2 stack (making it more p-type). Also, the Φ eff increases with the increase of doped N concentration due to the mitigation effect of doped N on interface dipole moment. Our findings will provide guidance in developing the environment annealing approach to modulation of Φ eff of the metal/oxide stack.

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Section: Impact Of Interface N On the Effective Work Functionsupporting

confidence: 94%

Impact of nitrogen on effective work function of metal/oxide stack: A first-principles study of the Pt/HfO2 interface

Liu

Ouyang

Durakiewicz

et al. 2015

Solid State Communications

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“…6͑b͒ lies well below the to N-N ͑which would correspond to N 2 formation͒ or N-O ͑which would correspond to the formation of NO or NO 2 ͒ bonds 49,14,56,57 and can, therefore, be attributed to Hf-N bonds. 14,56,57 Thus, N atoms in the hafnium oxynitride crystal occupy O sublattice sites, 14,56,57 which is the configuration described in our DFT calculations ͑see Sec. III͒.…”

Section: Discussionmentioning

confidence: 99%

On the phase formation of sputtered hafnium oxide and oxynitride films

Sarakinos

Mušić

Mráz

et al. 2010

Journal of Applied Physics

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Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O 2 -N 2 atmosphere. It is shown that the presence of N 2 allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O 2 partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O − ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O − ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O − ion flux without N 2 addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO 2 is independent from the O − bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO 2 crystal structure at the expense of the monoclinic HfO 2 one.

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“…However, remarkable studies have been performed with the aim of ameliorating the aforementioned problems in recent years. For instance, the high-k HfO 2 film fabricated by pulsed laser deposition (PLD)-introduced in situ ionized nitrogen showed good thermal stability, dielectric, and interface properties compared to N 2 [25] or amorphous Hf 1−x Ti x O 2 films showed low leakage current compared to HfO 2 gate insulators [26].…”

mentioning

confidence: 98%

Evaluation of Radiation Sensor Aspects of $\text{Er}_2$$\text{O}_3$ MOS Capacitors under Zero Gate Bias

Kahraman

Yılmaz

Aktağ

et al. 2016

IEEE Trans. Nucl. Sci.

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The aim of the present study is to investigate the usage of Erbium Oxide (Er2O3) as a gate dielectric in MOS-based radiation sensors. Er2O3 thin films were deposited on a p-type Si (100) substrate via RF magnetron sputtering and were annealed at 500 • C under N2 ambient. The structural properties of the Er2O3 thin films were determined via XRD, FTIR, and AFM analyses. The Erbium silicate formation was not observed in the XRD and FTIR spectra. The roughness root-mean-square was measured as 16.4 nm by the AFM analysis. Following the description of the film, the Er2O3 MOS capacitors were fabricated and irradiated by a 60 Co radioactive source in different doses varying from 4 Gy to 76 Gy. The capacitance-voltage (C-V) curves shifted to the right side compared to the ideal one in the dose range of 4-16 Gy and to the left side from 16 Gy to 76 Gy. The oxide trapped charge density increased with an increasing irradiation dose. A significant variation in the interface states densities was not observed, the value of which always remained in the order of 10 10 eV cm −2 in the studied dose range. Based on these results, it can be said that gamma radiation does not cause a significant deterioration during irradiation. The calibration curve of the capacitor was obtained from the flat band voltage shifts depending on the gamma dose. Some electrical parameters, such as the barrier height and acceptor concentration, were investigated depending on the gamma dose. The sensitivity of the capacitor was determined to be 107 mV/Gy for the dose range of 4-16 Gy and 61 mV/Gy for the dose range of 16-76. These results showed that the Er2O3 MOS capacitor was more sensitive to the gamma radiation compared to the SiO2 and Sm2O3-based capacitors.

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Improved thermal stability, interface, and electrical properties of HfO2 films prepared by pulsed laser deposition using in situ ionized nitrogen

Cited by 22 publications

References 21 publications

Impact of nitrogen on effective work function of metal/oxide stack: A first-principles study of the Pt/HfO2 interface

Impact of nitrogen on effective work function of metal/oxide stack: A first-principles study of the Pt/HfO2 interface

On the phase formation of sputtered hafnium oxide and oxynitride films

Evaluation of Radiation Sensor Aspects of $\text{Er}_2$$\text{O}_3$ MOS Capacitors under Zero Gate Bias

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