Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels

Abstract

In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >10 7 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.

Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors

“…The alternatives such as implementation of heavy doping concentration channel for improving the ON can be used which itself raise the turn-off problem in the device. Hybrid and multi-nanowire channel devices are other options which have been used to improve the ON state current of the device to more than 1 µA/µm [42,43]. However, the mentioned structures bring up the issue of complexity of the fabrication process.…”

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

“…Metal Oxide Thin Film Transistors (MOTFT) are a distinct class of metal-oxidesemiconductor field-effect transistors (MOSFET) fabricated by coating a layer of an active semiconductor layer, metallic contacts, and the dielectric layer over an insulating substrate. And, Printed Thin Film Transistors (TFT) are a major application of printed electronics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Solution processed inorganic oxide gate dielectric is key element for low voltage MOTFT.…”