Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

Ma, Jun; Liu, Chien; Liu, Weidong; Hung, Yu‐Wen; Fan, Yuchi; Hsu, Hsiao‐Hsuan; Zheng, Zhiwei; Cheng, Chun-Hu

doi:10.1109/tnano.2019.2961631

Cited by 4 publications

(3 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is the third order intermodulation in which the first order harmonic current and third order harmonic current are equal. The mathematical expression for the same has been expressed in equation (10). In order to have less distortion in the circuit IMD3 value should be less.…”

Section: = íIp3mentioning

confidence: 99%

See 1 more Smart Citation

RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness

2022

View full text Add to dashboard Cite

A novel Gate All Around Negative Capacitance Junction less FET (GAA-NC-JLFET) is proposed in this work, where different RF/Analog, Linear, and Non-linear parameters were investigated for different ferroelectric thickness in depth. The simulation result is calibrated with the available experimental data from literature. Adding a layer of ferroelectric material to a JLFET is a good means of decreasing short channel effects when compared to typical GAA JLFETs. The effect of ferroelectric layer thickness on DC parameters such as drain current (IDS), subthreshold swing (SS), threshold voltage (Vth), and Ion/Ioff as well as linear parameters such as transconductance coefficients (gm2 and gm3), voltage intercept points (VIP2 and VIP3), and input intercept point (IIP3) have been studied. Furthermore, this paper investigates non-linearity parameters such as harmonic distortion and intermodulation distortion in relation to various ferroelectric thicknesses. The TCAD device simulator was extensively used to conduct this analysis, and the results revealed that increasing the ferroelectric layer resulted in a significant improvement in the values of RF and linear parameters, as well as a decrease in the values of non-linearity parameter values, resulting in an increase in the device's linearity, which can be used in wide range of RFIC applications.

show abstract

Section: = íIp3mentioning

confidence: 99%

“…Beyond this limit, the devices cannot be scaled for the current to flow in the conduction channel. Furthermore, the threshold voltage [10,11] is difficult to scale in the MOS structure, making it difficult to achieve a highperformance gain and a more efficient device.…”

Section: Introductionmentioning

confidence: 99%

RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness

2022

View full text Add to dashboard Cite

show abstract

“…Therefore, by sweeping a given range of V INT while computing and extracting the corresponding V GS values, the pre-calculated drain current values as a function of the extracted external gate voltages of DG FE-GNRFET are within reach. It is worth noting that this computational methodology is the commonly used simulation method in literature to simulate different NC FETs endowed with MFM-based compound gate[26,[30][31][32][33][34].…”

mentioning

confidence: 99%

Leveraging negative capacitance ferroelectric materials for performance boosting of sub-10 nm graphene nanoribbon field-effect transistors: a quantum simulation study

Tamersit¹,

Moaiyeri²,

Jooq³

2022

Nanotechnology

View full text Add to dashboard Cite

In this paper, an ultrascaled ballistic graphene nanoribbon field-effect transistor (GNRFET) endowed with a compound gate based on metal-ferroelectric-metal (MFM) structure is proposed to overcome the limitations encountered with the conventional nanoscale GNRFET. The ballistic transistor is computationally investigated by solving self-consistently the non-equilibrium Green’s function (NEGF) formalism and the Poisson solver in conjunction with the Landau–Khalatnikov equation. The numerical investigation has included the ferroelectric-induced amplified internal metal voltage, the role of the ferroelectric thickness in boosting the device performance, the assessment of the switching and subthreshold performance, and the analysis of the FE-GNRFET scaling capability. The simulations revealed that the MFM-based gate can significantly boost the performance of GNRFETs including the switching behavior, the on-current, the off-current, the current ratio, the swing factor, the intrinsic delay, and the scaling capability. More importantly, the proposed MFM GNRFET was found able to provide sub-thermionic subthreshold swing even with sub-10 nm gate lengths, which is very promising for low-power applications. The obtained results indicate that the MFM-based gating approach can give new impulses to the GNRFET technology.

show abstract

Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study

Tamersit

Jooq

Moaiyeri

2021

Physica E: Low-dimensional Systems and Nanostructures

View full text Add to dashboard Cite

Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

Cited by 4 publications

References 22 publications

RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness

RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness

Leveraging negative capacitance ferroelectric materials for performance boosting of sub-10 nm graphene nanoribbon field-effect transistors: a quantum simulation study

Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study

Contact Info

Product

Resources

About