Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering

Kim, Taikyu; Kim, Jeong Kyu; Yoo, Baekeun; Xu, Hongwei; Yim, Sungyeon; Kim, Seunghwan; Yu, Hyun Yong; Jeong, Jae Kyeong

doi:10.1039/c9tc04345d

Cited by 19 publications

(10 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Those make fabricating high‐performance p ‐channel oxide TFTs (compatible with n ‐channel oxide TFTs) challenging. Although it is not easy to design high‐performance p ‐channel oxide TFTs, a few p ‐type oxide candidates are available, such as copper‐based oxides 89–91 and tin‐based oxides 92–95 . Some reports have been published on ALD‐derived p ‐channel oxide TFTs with copper‐ 96–98 and tin‐based oxides 99–102 .…”

Section: Ald‐derived P‐channel Oxide Tftsmentioning

confidence: 99%

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

Self Cite

View full text Add to dashboard Cite

This paper reviews recent developments in the fabrication of high‐performance n‐channel metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra‐high‐definition organic light‐emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD‐derived n‐type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n‐channel oxide TFTs are described. The performance of n‐channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two‐dimensional electron gases, and the introduction of high‐k dielectric such as ALD‐derived hafnium oxide, which is highlighted in this review. Finally, progress in p‐channel ALD‐derived oxide TFTs is briefly addressed with respect to complementary metal–oxide‐semiconductor applications.

show abstract

Section: Ald‐derived P‐channel Oxide Tftsmentioning

confidence: 99%

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

Self Cite

View full text Add to dashboard Cite

show abstract

“…Tin oxide or SnO with its p-type nature is a highly interesting option for application in p-n heterojunctions and eld-effect transistors (FETs) and as interconnectors in different electronic instruments. [240][241][242][243][244] Furthermore, the ambipolar characteristics of SnO have opened up a new platform for application of tin oxide in electrical inverters. 102,245 A facile synthesis of a 2D oxide lm of liquid metal was developed to extract pin hole-free tin oxide lms.…”

Section: Applications Of 2d Films Of Liquid Metalsmentioning

confidence: 99%

State-of-the-art surface oxide semiconductors of liquid metals: an emerging platform for development of multifunctional two-dimensional materials

2021

View full text Add to dashboard Cite

show abstract

“…In the past few years, great endeavors have been made in the investigation of n-channel TFT with excellent performance. However, the exploration on the p-type TFT is far beyond mature, the main obstacles for the rare research of p-type oxide are as follows: (1) there have been no efficient methods to synthesize high-quality p-type MOS; (2) the choices for p-channel MOS are limited, to the best of our knowledge, only CuxO [3,4] , SnO [5,6] , NiO [7] , CuMO2 (M = Al, Ga, or Cr) [8][9][10] and their mixtures [11,12] or laminates [13] have been reported to exhibit p-type conductivity.…”

Section: Introductionmentioning

confidence: 99%

High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

Chen

2022

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Metal oxide semiconductor (MOS) is essential to compose high-performance electronic devices, however, the investigation on p-type MOS is relatively rare compared with its n-type counterpart. In this work, LaGaO3 thin films with superior p-type conductivity have been prepared via a facile solution process. Moreover, we have implemented Al2O3 and SiO2 as the dielectric of the p-channel LaGaO3 thin film transistors (TFTs) annealed at different temperatures. Particularly, the LaGaO3/Al2O3 TFTs annealed at 700 °C exhibit an ultrahigh hole mobility of 12.4 cm2V-1s-1, Under the same conditions, LaGaO3/Al2O3 thin film transistor is two orders of magnitude higher than LaGaO3/SiO2 thin film transistor. The advanced p-type characteristics of the LaGaO3 thin film, along with its facile low-cost fabrication process can shed new light on future design of high-performance complementary MOS circuit with other optimized facile-integrated dielectrics.

show abstract

Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering

Abstract: Metal–interlayer–semiconductor contact reduces metal-induced gap states, mitigating Fermi-level pinning at metal/semiconductor interface. Here, switching property of p-type SnO FET is enhanced by increasing electron Schottky barrier at off-state.

Cited by 19 publications

References 44 publications

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

State-of-the-art surface oxide semiconductors of liquid metals: an emerging platform for development of multifunctional two-dimensional materials

High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

Contact Info

Product

Resources

About