Improved subthreshold slope method for precise extraction of gate capacitive coupling coefficients in stacked gate and source-side injection flash memory cells

Cho, Caleb Yu-Sheng; Chen, Ming‐Jer

doi:10.1016/j.sse.2004.01.008

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Observation Of Single-electron Transfer1

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Cited by 4 publications

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“…5) we obtain C CG and C SG to be 7.22·10 -17 and 3.73·10 -17 F respectively. By measuring the CG-FG coupling ratio [6], [9], which is about 0.38, we are able to calculate the total FG capacitance: C FG =C CG /0.38=1.9·10 -16 F. It is worth noting that because of the fringing effects, the real FG capacitances obtained using a presented technique are usually higher than the estimates based on the cell physical dimensions.…”

Section: Observation Of Single-electron Transfermentioning

confidence: 99%

Detection of Single-Electron Transfer Events and Capacitance Measurements in Submicron Floating-Gate Memory Cells

Tkachev

Kotov

2006

2006 European Solid-State Device Research Conference

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A simple technique for monitoring floating gate (FG) charge gain/loss with elementary charge accuracy is proposed. The technique does not require nano-scale FG or low temperature and can be applied to virtually any submicron FG memory cell. The potential applications include precise capacitance measurements, as well as analysis of program, erase, disturb and data retention characteristics of FG memory cells in extremely low range of FG current (down to 10 -23 A and below).

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Section: Observation Of Single-electron Transfermentioning

confidence: 99%