2004
DOI: 10.1016/j.sse.2004.01.008
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Improved subthreshold slope method for precise extraction of gate capacitive coupling coefficients in stacked gate and source-side injection flash memory cells

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Cited by 4 publications
(1 citation statement)
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“…5) we obtain C CG and C SG to be 7.22·10 -17 and 3.73·10 -17 F respectively. By measuring the CG-FG coupling ratio [6], [9], which is about 0.38, we are able to calculate the total FG capacitance: C FG =C CG /0.38=1.9·10 -16 F. It is worth noting that because of the fringing effects, the real FG capacitances obtained using a presented technique are usually higher than the estimates based on the cell physical dimensions.…”
Section: Observation Of Single-electron Transfermentioning
confidence: 99%
“…5) we obtain C CG and C SG to be 7.22·10 -17 and 3.73·10 -17 F respectively. By measuring the CG-FG coupling ratio [6], [9], which is about 0.38, we are able to calculate the total FG capacitance: C FG =C CG /0.38=1.9·10 -16 F. It is worth noting that because of the fringing effects, the real FG capacitances obtained using a presented technique are usually higher than the estimates based on the cell physical dimensions.…”
Section: Observation Of Single-electron Transfermentioning
confidence: 99%