Improved small-signal equivalent circuit model and large-signal state equations for the MOSFET/MODFET wave equation

Roblin, Patrick; Kang, S.C.; Liou, Wan–Rone

doi:10.1109/16.119005

Cited by 23 publications

(13 citation statements)

References 17 publications

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“…The equivalent voltages (16) provide the same conductive current into a virtually quasi-static device described by (4) and (5) or, equivalently, by (6). Then, by substituting (16) into (14), we obtain (17) which gives the total nonquasi-static current of the actual device in an equivalent voltage-controlled form through equations which are analogous to the quasi-static model (6). Model equations (17) are coherent with the circuit schematic shown in Fig.…”

Section: B Equivalent Controlling Voltagesmentioning

confidence: 97%

“…In accordance with the equivalent voltage approach adopted for the charge-voltage relationship (13), also in this case it is convenient to define suitable equivalent voltages as (16) with . The equivalent voltages (16) provide the same conductive current into a virtually quasi-static device described by (4) and (5) or, equivalently, by (6). Then, by substituting (16) into (14), we obtain (17) which gives the total nonquasi-static current of the actual device in an equivalent voltage-controlled form through equations which are analogous to the quasi-static model (6).…”

Section: B Equivalent Controlling Voltagesmentioning

confidence: 98%

“…The charge-controlled model (4) and (5) is suitable to describe the device behavior under quasi-static operation, and it can be alternatively expressed in a voltage-controlled form by simply substituting (5) into (4), i.e., (6) where is the vector of the dc currents and is a capacitive matrix describing the device dynamics, whenever the charge response to the voltage excitation may be considered almost instantaneous, i.e., when memory effects have vanishing small durations. Current-voltage relationship (6) is coherent with (2) when the integral term is replaced by (3).…”

Section: B Equivalent Controlling Voltagesmentioning

confidence: 99%

“…According to (17), a nonlinear nonquasi-static model is obtained by considering an associated virtual quasi-static device described by the nonlinear algebraic functions and defined in (6), where and are controlled by equivalent, instead of actual, port voltages ( and , respectively). This formulation is convenient since, in order to guarantee that no charge perturbation is introduced in the off-state (where the device behavior is practically quasi-static), the and voltage deviations do not need to become vanishingly small when applied to the strictly intrinsic device (which acts as an open circuit in the off-state).…”

Section: B Equivalent Controlling Voltagesmentioning

confidence: 99%

See 3 more Smart Citations

A Nonquasi-Static Empirical Model of Electron Devices

Santarelli

Giacomo

Raffo

et al. 2006

IEEE Trans. Microwave Theory Techn.

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A new nonquasi-static nonlinear model of electron devices is proposed by adopting a perturbed charge-controlled approach. The model is based on the definition of a virtual quasi-static device, associated with the actual one, which is controlled by means of equivalent voltage sources. The advantage of this approach is that conventional purely quasi-static models can be still adopted even at very high frequencies, if suitable equivalent voltages are applied. Identification from small-signal measurements and implementation into commercially available computer-aided design tools of the new nonquasi-static model are described in this paper. Finally, by considering a GaAs p-high electron mobility transistor, accurate prediction capabilities at microwaves and millimeter frequencies are experimental verified and compared with a more conventional equivalent-circuit-based mode

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Section: B Equivalent Controlling Voltagesmentioning

confidence: 97%

Section: B Equivalent Controlling Voltagesmentioning

confidence: 98%

Section: B Equivalent Controlling Voltagesmentioning

confidence: 99%

Section: B Equivalent Controlling Voltagesmentioning

confidence: 99%

See 2 more Smart Citations

A Nonquasi-Static Empirical Model of Electron Devices

Santarelli

Giacomo

Raffo

et al. 2006

IEEE Trans. Microwave Theory Techn.

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show abstract

“…mall signal modeling simplifies the analysis of non-linear devices, in which the signal in question is treated as a small perturbation around the bias point [1]- [3]. The resulting linear approximation reduces design complexity of circuits such as amplifiers [4]- [9].…”

Section: Introductionmentioning

confidence: 99%

TFT Small Signal Model and Analysis

Cheng

Lee

Nathan

2016

IEEE Electron Device Lett.

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We present an accurate small signal model for thin film transistors (TFTs) taking into account non-idealities such as contact resistance, parasitic capacitance, and threshold voltage shift. The model gives high accuracy in s-parameters, and the predicted cutoff frequency yields 1% discrepancy compared with measurement results. In contrast, the conventional CMOS small signal model adapted for TFTs yields 12.5% error. The TFT's cutoff frequency is also evaluated under bias stress to examine the effect of device instability on small signal behavior. Index Terms-Small signal model, s-parameter, thin film transistor (TFT), cutoff frequency, threshold voltage (V T ) shift

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Analog Circuit Design

1999

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Improved small-signal equivalent circuit model and large-signal state equations for the MOSFET/MODFET wave equation

Cited by 23 publications

References 17 publications

A Nonquasi-Static Empirical Model of Electron Devices

A Nonquasi-Static Empirical Model of Electron Devices

TFT Small Signal Model and Analysis

Analog Circuit Design

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