Improved Semiconductor Device Reliability from Plasma Dicing

Barnett, Richard; Hopkins, Janet; Fulton, Stewart; Ansell, Oliver; Kazemi, Samira; Day, Matthew

doi:10.23919/iwlpc.2019.8913904

Cited by 3 publications

(3 citation statements)

References 4 publications

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“…Therefore plasma dicing is expected to result in stronger dies and less damage and defects. [23] [24]…”

Section: Ultra-thin Die Pick and Placementioning

confidence: 99%

Optimized Die Preparation and Handling for High Yield Hybrid Die to Wafer Bonding

Bex,

Phommahaxay,

Kennes

et al. 2024

IMAPSource Proceedings

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Hybrid Cu/dielectric bonding is a well-established technology for Wafer-To-Wafer (W2W) bonding, but it is challenging to apply this technology to Die-To-Wafer (D2W) bonding. Very small particles on the die or wafer can lead to voids/non-bonded regions. Processes to clean and activate wafers for hybrid W2W are quite mature, but it is very challenging to apply these to thinned and singulated dies for D2W bonding. To allow a (partial) re-use of the existing wafer level cleaning, metrology and activation processes and equipment, we propose a new concept where dies are being singulated, cleaned and activated on a glass carrier wafer. After the die preparation steps, the dies are directly picked from the carrier wafer. This approach does not involve additional pick & place steps and avoids the use of conventional dicing tapes. The first direct dielectric D2W bonding experiments using this new approach show a very promising bonding yield, with a high number of completely void-free bonded 50 μm thin dies. Additionally, by eliminating dicing tapes, thinned wafers and singulated dies are always supported by a rigid surface, enabling ultrathin die handling. In this study we also report the handling of dies down 10 μm thickness.

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“…Therefore plasma dicing is expected to result in stronger dies and less damage and defects. [23] [24]…”

Section: Ultra-thin Die Pick and Placementioning

confidence: 99%

Optimized Die Preparation and Handling for High Yield Hybrid Die to Wafer Bonding

Bex,

Phommahaxay,

Kennes

et al. 2024

IMAPSource Proceedings

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“…This wafer dicing process by laser ablation, in which material is removed via evaporation and melt ejection under irradiation of laser pulses, results in diminished kerf width, reduction in top-/bottomside chipping and cracking and high throughput over mechanical blade dicing [4,5,3]. Even with the improvement offered by laser technology in dicing process, damage or weakening of the silicon die is still possible [6]. The heat-affected zone (HAZ), a term used to encompass the damage caused to a material during and after irradiance by a laser pulse, impacts the die strength [7].…”

Section: Introductionmentioning

confidence: 99%

“…The heat-affected zone (HAZ), a term used to encompass the damage caused to a material during and after irradiance by a laser pulse, impacts the die strength [7]. In recent years, dicing using plasma technology has been explored to further improve the dicing process [8,5,6].…”

Section: Introductionmentioning

confidence: 99%

Effect of Silicon Die Condition on the Breaking Load Performance of a Dam and Fill Semiconductor Package

Talledo¹

2021

JERR

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A semiconductor package has a silicon die on which an integrated circuit (IC) is fabricated. The die is singulated from a single wafer using processes like mechanical sawing or laser grooving. These processes have impact on the final condition of the silicon die after wafer singulation. This paper discusses a study on the effect of the die condition on the breaking load of a package with a dam and fills structure. The encapsulation material of this type of package has lower modulus when compared with the epoxy mold compound material used in most molded packages. The package breaking load was determined using 3-point bend test for two sets of packages. The first set of packages was assembled with silicon die produced using mechanical sawing. The second set was assembled with die produced using laser grooving. Results of the 3-point bend test showed that the breaking load of the package with die from mechanical sawing is higher compared with the package assembled with die from laser grooving. The study revealed that that the silicon die condition has significant effect on the robustness of the final package where the die is used.

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300mm Full Thickness Si-Based IC Singulation Using Plasma Dicing for Advanced Packaging Technologies

Surapaneni

Hamlin

Chiu

et al. 2022

2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)

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Improved Semiconductor Device Reliability from Plasma Dicing

Cited by 3 publications

References 4 publications

Optimized Die Preparation and Handling for High Yield Hybrid Die to Wafer Bonding

Optimized Die Preparation and Handling for High Yield Hybrid Die to Wafer Bonding

Effect of Silicon Die Condition on the Breaking Load Performance of a Dam and Fill Semiconductor Package

300mm Full Thickness Si-Based IC Singulation Using Plasma Dicing for Advanced Packaging Technologies

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