Improved RF CMOS active inductor with high self resonant frequency

Andriesei, Cristian; Goraș, Liviu; Temçamani, Farid; Delacressonnière, Bruno

doi:10.1109/icecs.2010.5724706

Cited by 5 publications

(2 citation statements)

References 12 publications

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“…As it can be noticed, the second RLC model with 4 branches has better accuracy compared to the classical one. However, if the self resonant frequency is the major parameter of interest, the RLC classical model can be used very well to predict the resonant frequency but only if the charge based transistor model is in use, otherwise the second model is by far the best [14]. This is a very important remark since no author working on TOSI inductors specified which transistor model was used for simulations.…”

Section: The Effect Of Transcapacitances On the Rlc Models Frequenmentioning

confidence: 95%

Considerations on the RLC model of CMOS transistor only simulated inductors

Andriesei¹,

Patache²,

Goraș³

et al. 2011

ISSCS 2011 - International Symposium on Signals, Circuits and Systems

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International audienceA study of the classical RLC equivalent passive model for CMOS transistor only simulated inductors (TOSI) is presented. The model is compared with a four branches RLC model and its frequency performances and limitations are discussed. The analysis is applied on a particular active inductor topology for frequencies between 0.45 GHz and 3.3 GHz, the study being focused on the resonant frequency and inductance value. As simulations show, the model accuracy is strongly dependent on transistor parasitics and device modeling. It is shown that the second model is more accurate regarding the inductance value while the classical one is helpful for simplified calculus with respect to the resonant frequency. These considerations are valid in case of using charge based transistor model only. The simulations were carried out in 0.35μm AMS CMOS process

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Section: The Effect Of Transcapacitances On the Rlc Models Frequenmentioning

confidence: 95%

Considerations on the RLC model of CMOS transistor only simulated inductors

Andriesei¹,

Patache²,

Goraș³

et al. 2011

ISSCS 2011 - International Symposium on Signals, Circuits and Systems

Self Cite

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“…Single ended active inductors commonly used in active filtering and VCO circuits [1] have known an enormous revolution since their creation in the eighties. Their theory shows that they are equivalent to a resonator but are advantageous by their tunability ease due to their active components and can attain very high quality factors [2] [3]. This can be made by enhancing biasing conditions which control transistor's transconductance and by adding a negative resistor to compensate serial and parallel loss [4].…”

Section: Introductionmentioning

confidence: 99%

Fully differential active inductor for CMOS active filter applications

Halkhams¹,

Bekkali²,

Hamdani³

et al. 2015

2015 International Conference on Electrical and Information Technologies (ICEIT)

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A fully differential active inductor widely used in the implementation of analog integrated circuits is presented in this paper. The quality of the inductor is insured due to a differential negative resistor connected at the input of the inductor. Single ended active inductors present non-linear effects hence the need of using differential topology to reduce them and avoid the waste of biasing current. The simulated differential active inductor has a very high quality factor of 1340 and operates at 1.34 GHz. It can be easily tuned in frequency which is suitable for GSM 1800MHz applications.Keywords-diff erential inductor; active inductor; negative resistor; common mode input I.

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