Improved Resistive Switching of Textured ZnO Thin Films Grown on Ru Electrodes

Abstract

This letter investigates the unipolar resistive switching behaviors of sputtered ZnO thin films by changing the electrode combinations of Pt and Ru, creating four sandwich structures of Pt/ZnO/Pt, Pt/ZnO/Ru, Ru/ZnO/Pt, and Ru/ZnO/Ru. Only the Pt/ZnO/Ru devices in this letter achieved favorable resistive switching characteristics, including good endurance performance, narrow distributions in switching parameters, high ON/OFF ratio (> 150), and clear difference between the set and reset voltages (∼1 V). This may be attributed to the low oxygen affinity of Pt electrodes and the strong c-axis texture of ZnO thin films grown on Ru electrodes.

Resistive switching properties and physical mechanism of cobalt ferrite thin films

“…The uniform switching voltages and little fluctuation of resistance values may result from the enhanced crystallinity and highly preferred orientation of the CoFe 2 O 4 thin film. 14,21,22 In order to elucidate the underlying RS mechanism, the conduction mechanisms in LRS and HRS have been investigated in detail, from which transport properties of carriers can be understood deeply. Figure 4(a) shows the typical I-V curves of LRS plotted as in double-Ln scale.…”

Structural and resistance switching properties of epitaxial Pt/ZnO/TiN/Si(001) heterostructures

“…The extra arrays of spots on either side of the indexed spots along [0002] are due to double diffraction occurring between the two domains of ZnO. For example, the spot (indicated by an arrow) at 0.955 nm À1 is due to diffraction along ZnO1 g 0-20 -ZnO2 g [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] . The SAED pattern for the Pt layer in Fig.…”

“…Though there are many reports on the resistance switching characteristics in ZnO [10][11][12][13][14][15] and doped ZnO [16][17][18] based devices, not much focus has been given to the structural characterization of ZnO. In most of these devices, they used polycrystalline 14 or textured 15 ZnO films. In the case of polycrystalline films, the presence of random large angle grain boundaries and other defects poses difficulties in terms of control and reliability of the devices.…”

Surface effects of electrode-dependent switching behavior of resistive random-access memory

“…13,14 Researchers have previously reported the resistive switching properties of ZnO with various metal electrodes. 11,15 However, there has not yet been a systematic investigation of how surface effects influence the metal electrode dependence of ZnO ReRAM.…”