Improved reliability of large-sized a-Si thin-film-transistor by back channel treatment in H2

Lee, Hao-Chieh; Chang‐Liao, Kuei‐Shu; Liu, Yanlin

doi:10.1016/j.microrel.2015.09.001

Cited by 2 publications

(1 citation statement)

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“…TFT works under gate voltage stressing, illumination, heating circumstances, and the stability of Vth in these stresses is particularly important. In order to improve the Vth stability of a-Si TFTs, the following improvement measures are usually adopted: GI layer film formation and structure adjustment [1~3] , GI layer/active layer interface optimization [4~10] , active layer annealing [11] , back channel plasma treatment [12] , etc. However, the influence of gate on Vth is rarely reported.…”

Section: Introductionmentioning

confidence: 99%

P‐7.18: Effect of gate materials and stack structure on threshold voltage of ADS Pro TFT

Liu,

Huang,

et al. 2024

Symp Digest of Tech Papers

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TFT Vth is affected by gate material, thickness and film structure. If the Al/Mo electrode is added to bottom Mo, or Al is changed to Cu, the work function of Gate increases, that is, the flat band voltage increases, and finally Vth increases. As the gate thickness increases, the gate insulator at the profile position becomes thinner, resulting in a decrease in Vth. MoNb/Cu electrode is covered with top MoNb, which inhibits the diffusion of Cu to gate insulator(GI) and reduces the dielectric loss of GI, so that Vth decreases. At the same time, Cu diffuse to GI layerr, resulting in the positive Vth shift under negative gate stressing. Once MoNb/Cu is covered with top MoNb, the diffusion of Cu ions is inhibited, Vth gradually shifts in the negative direction under negative gate stressing and the positive Vth shift is smaller under positive gate stressing, which indicates that TFT is more stable.

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Section: Introductionmentioning

confidence: 99%