Improved photoresponse of a-axis GaN microwire/p-polymer hybrid photosensor by the piezo-phototronic effect

Song, Weidong; Wang, Xingfu; Xia, Chao; Wang, Rupeng; Zhao, Lingling; Guo, Dexiao; Chen, Hang; Xiao, Jiakai; Su, Shichen; Li, Shuti

doi:10.1016/j.nanoen.2017.01.032

Cited by 37 publications

(34 citation statements)

References 38 publications

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“…Among 3D bulk materials, GaN, as a member of the third‐generation semiconductors, has been developed as an excellent candidate for UV photodetection due to its direct wide‐bandgap of 3.4 eV, excellent radiation hardness, and high thermal conductivity. [ 32–34 ] However, the integration of MXene and GaN that may bring about intriguing attributes has not been explored yet for UV optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

et al. 2021

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A self‐powered, high‐performance Ti3C2Tx MXene/GaN van der Waals heterojunction (vdWH)‐based ultraviolet (UV) photodiode is reported. Such integration creates a Schottky junction depth that is larger than the UV absorption depth to sufficiently separate the photoinduced electron/hole pairs, boosting the peak internal quantum efficiency over the unity and the external quantum efficiency over 99% under weak UV light without bias. The proposed Ti3C2Tx/GaN vdWH UV photodiode demonstrates pronounced photoelectric performances working in self‐powered mode, including a large responsivity (284 mA W−1), a high specific detectivity (7.06 × 1013 Jones), and fast response speed (rise/decay time of 7.55 µs/1.67 ms). Furthermore, the remarkable photovoltaic behavior leads to an impressive power conversion efficiency of 7.33% under 355 nm UV light illumination. Additionally, this work presents an easy‐processing spray‐deposition route for the fabrication of large‐area UV photodiode arrays that exhibit highly uniform cell‐to‐cell performance. The MXene/GaN photodiode arrays with high‐efficiency and self‐powered ability show high potential for many applications, such as energy‐saving communication, imaging, and sensing networks.

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Section: Introductionmentioning

confidence: 99%

Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

et al. 2021

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“…Furthermore, the work using patterned Si (110) substrate was introduced and benefited its piezo-potential distributed along the transverse orientation of a-axis GaN when experiencing a compressive/tensile strain along the axial orientation [57]. Tsai et al also worked on the same principle as mentioned above [58], whereby Si substrate with no preferential orientation was utilized.…”

Section: Si Substratementioning

confidence: 99%

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

et al. 2022

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Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.

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“…For example, H 2 , H 2 S, and C 2 H 4 are common pollutant gases that pose a serious risk to human health [ 126 , 127 ]. This scenario requires unified gas sensors with excellent selectivity, reliability [ 128 ], high sensitivity [ 129 ], fast response, long-term stability, cost-effectiveness, and workability at low gas concentrations [ 130 , 131 , 132 , 133 ]. An ample gas-sensing span is also necessary [ 134 ]; the ideal range of sensing gas detectors is 10–1000 ppm [ 135 ].…”

Section: Applications Of (In)gan Nanostructuresmentioning

confidence: 99%

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Soopy

Tang

et al. 2021

Nanomaterials

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This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

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Improved photoresponse of a-axis GaN microwire/p-polymer hybrid photosensor by the piezo-phototronic effect

Cited by 37 publications

References 38 publications

Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

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