Improved Performance of Organic Light-Emitting Diodes Fabricated on Al-Doped ZnO Anodes Incorporating a Homogeneous Al-Doped ZnO Buffer Layer Grown by Atomic Layer Deposition

Choi, Yong June; Gong, Soo Jung; Park, Chang Sun; Lee, Hong Sub; Jang, Ji Geun; Chang, Ho; Yeom, Geun Young; Park, Hyung Ho

doi:10.1021/am400140c

Cited by 68 publications

(25 citation statements)

References 29 publications

(39 reference statements)

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“…AZO is a transparent conducting oxide (TCO) with reasonable electrical resistivity (~10 −4 Ω cm) and large transmittance (~92%), making it an attractive candidate for transparent conducting electrode in photoelectric devices. It has been demonstrated that an accompanying free electron is paired with the process when a Zn 2+ cation is replaced by an Al 3+ cation, which is responsible for the increased conductivity [39,40,41]. Furthermore, Figure 3c shows the SEM image for the A 3 ZO-NPs obtained by the present chemical precipitation and 500 °C calcination processes.…”

Section: Resultsmentioning

confidence: 93%

Structural Transitions in Nanosized Zn0.97Al0.03O Powders under High Pressure Analyzed by in Situ Angle-Dispersive X-ray Diffraction

et al. 2016

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Nanosized aluminum-doped zinc oxide Zn1−xAlxO (AZO) powders (AZO-NPs) with x = 0.01, 0.03, 0.06, 0.09 and 0.11 were synthesized by chemical precipitation method. The thermogravimetric analysis (TGA) indicated that the precursors were converted to oxides from hydroxides near 250 °C, which were then heated to 500 °C for subsequent thermal processes to obtain preliminary powders. The obtained preliminary powders were then calcined at 500 °C for three hours. The structure and morphology of the products were measured and characterized by angle-dispersive X-ray diffraction (ADXRD) and scanning electron microscopy (SEM). ADXRD results showed that AZO-NPs with Al content less than 11% exhibited würtzite zinc oxide structure and there was no other impurity phase in the AZO-NPs, suggesting substitutional doping of Al on Zn sites. The Zn0.97Al0.03O powders (A3ZO-NPs) with grain size of about 21.4 nm were used for high-pressure measurements. The in situ ADXRD measurements revealed that, for loading run, the pressure-induced würtzite (B4)-to-rocksalt (B1) structural phase transition began at 9.0(1) GPa. Compared to the predicted phase-transition pressure of ~12.7 GPa for pristine ZnO nanocrystals of similar grain size (~21.4 nm), the transition pressure for the present A3ZO-NPs exhibited a reduction of ~3.7 GPa. The significant reduction in phase-transition pressure is attributed to the effects of highly selective site occupation, namely Zn2+ and Al3+, were mainly found in tetrahedral and octahedral sites, respectively.

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Section: Resultsmentioning

confidence: 93%

Structural Transitions in Nanosized Zn0.97Al0.03O Powders under High Pressure Analyzed by in Situ Angle-Dispersive X-ray Diffraction

et al. 2016

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“…Oxide semiconductors and their potential application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties [1][2][3][4][5][6]. An understanding of the origin of these properties is also very important, for which many studies have employed various analytical techniques.…”

Section: Introductionmentioning

confidence: 99%

Band Structure Analysis of La_0.7Sr_0.3MnO₃Perovskite Manganite Using a Synchrotron

Lee

Park

2015

Advances in Condensed Matter Physics

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Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study aLa0.7Sr0.3MnO3(LSMO) oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.

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“…Rutile phase of TiO 2 is more stable than the other two phases and the transformation from anatase and brookite to rutile can be achieved by thermal annealing [5][6][7]. Nanosized TiO 2 has found applications in many fields like gas sensors [8,9] transistors [10], light-emitting diodes (LED) [11], sunscreen [12], field emission devices [13] and solar cells [14]. The properties of TiO 2 most probably depend upon the preparation method.…”

Section: Introductionmentioning

confidence: 99%

Influence of thermal annealing on the photo catalytic properties of TiO2 nanoparticles under solar irradiation

Prasannalakshmi

Shanmugam

Kannadasan

et al. 2015

J Mater Sci: Mater Electron

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Nanosized TiO 2 particles have been synthesized by a sol-gel method and studied for their thermal, structural, optical, morphological, and photocatalytic properties at different annealed temperatures. The results of the structural analysis show the anatase phase of TiO 2 at 400°C, the mixed phase at 700°C, and pure rutile phase at 800°C. The red-shift of absorption edges and band gap reduction are the two factors suggested by UV-Vis spectra, confirming the phase change of TiO 2 from anatase to rutile on annealing at 800°C. The PL emission results of annealed products exhibit enhanced visible emissions on annealing as a result of increased oxygen vacancies. The photocatalytic activities of the annealed products were analyzed against the organic dye brilliant green (BG). Among the all, TiO 2 annealed at 700°C shows an enhanced photocatalytic performance against the organic dye BG.

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Improved Performance of Organic Light-Emitting Diodes Fabricated on Al-Doped ZnO Anodes Incorporating a Homogeneous Al-Doped ZnO Buffer Layer Grown by Atomic Layer Deposition

Cited by 68 publications

References 29 publications

Structural Transitions in Nanosized Zn0.97Al0.03O Powders under High Pressure Analyzed by in Situ Angle-Dispersive X-ray Diffraction

Structural Transitions in Nanosized Zn0.97Al0.03O Powders under High Pressure Analyzed by in Situ Angle-Dispersive X-ray Diffraction

Band Structure Analysis of La_0.7Sr_0.3MnO₃Perovskite Manganite Using a Synchrotron

Influence of thermal annealing on the photo catalytic properties of TiO2 nanoparticles under solar irradiation

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Improved Performance of Organic Light-Emitting Diodes Fabricated on Al-Doped ZnO Anodes Incorporating a Homogeneous Al-Doped ZnO Buffer Layer Grown by Atomic Layer Deposition

Cited by 68 publications

References 29 publications

Structural Transitions in Nanosized Zn0.97Al0.03O Powders under High Pressure Analyzed by in Situ Angle-Dispersive X-ray Diffraction

Structural Transitions in Nanosized Zn0.97Al0.03O Powders under High Pressure Analyzed by in Situ Angle-Dispersive X-ray Diffraction

Band Structure Analysis of La0.7Sr0.3MnO3Perovskite Manganite Using a Synchrotron

Influence of thermal annealing on the photo catalytic properties of TiO2 nanoparticles under solar irradiation

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Product

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Band Structure Analysis of La_0.7Sr_0.3MnO₃Perovskite Manganite Using a Synchrotron